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Results: 1-12 |

Results: 12

MODULATION OF THE POLARIZATION OF SEMICONDUCTOR-LASER RADIATION AT CONSTANT OUTPUT POWER

Authors: SOKOLOVSKII GS DERYAGIN AG KUCHINSKII VI

Citation: Gs. Sokolovskii et al., MODULATION OF THE POLARIZATION OF SEMICONDUCTOR-LASER RADIATION AT CONSTANT OUTPUT POWER, Technical physics letters, 24(8), 1998, pp. 660-662

PROPERTIES OF GAINASSB SOLID-SOLUTIONS OBTAINED FROM ANTIMONY FLUXES BY LIQUID-PHASE EPITAXY IN THE SPINODAL DECAY REGION

Authors: VASILEV VI DERYAGIN AG KUCHINSKII VI SMIRNOV VM SOKOLOVSKII GS TRETYAKOV DN FALEEV NN

Citation: Vi. Vasilev et al., PROPERTIES OF GAINASSB SOLID-SOLUTIONS OBTAINED FROM ANTIMONY FLUXES BY LIQUID-PHASE EPITAXY IN THE SPINODAL DECAY REGION, Technical physics letters, 24(3), 1998, pp. 231-232

HIGH-QUALITY ALGASB, ALGAASSB AND INGAASSB EPITAXIAL LAYERS GROWN BY LIQUID-PHASE EPITAXY FROM SB-RICH MELTS

Authors: DERYAGIN AG FALEEV NN SMIRNOV VM SOKOLOVSKII GS VASILEV VI

Citation: Ag. Deryagin et al., HIGH-QUALITY ALGASB, ALGAASSB AND INGAASSB EPITAXIAL LAYERS GROWN BY LIQUID-PHASE EPITAXY FROM SB-RICH MELTS, IEE proceedings. Optoelectronics, 144(6), 1997, pp. 438-440

POLARIZATION SWITCHING TIME FOR SEMICONDUCTOR-LASER RADIATION

Authors: SOKOLOVSKII GS DERYAGIN AG KUCHINSKII VI

Citation: Gs. Sokolovskii et al., POLARIZATION SWITCHING TIME FOR SEMICONDUCTOR-LASER RADIATION, Technical physics letters, 23(5), 1997, pp. 373-376

PHOTOLUMINESCENCE PROPERTIES OF ALXGA1-XAS EPITAXIAL LAYERS GROWN UNDER CONDITIONS OF ULTRAFAST FLUX COOLING

Authors: ABRAMOV AV DERYAGIN AG DERYAGIN NG KOKHANOVSKII SI KUCHINSKII VI RAFAILOV EU SOKOLOVSKII GS TRETYAKOV DN

Citation: Av. Abramov et al., PHOTOLUMINESCENCE PROPERTIES OF ALXGA1-XAS EPITAXIAL LAYERS GROWN UNDER CONDITIONS OF ULTRAFAST FLUX COOLING, Technical physics letters, 23(3), 1997, pp. 172-174

RECOMBINATION-ENHANCED ANNEALING IN GAAS AND ALGAAS LAYERS

Authors: SOBOLEV MM ABRAMOV AV DERYAGIN NG DERYAGIN AG KUCHINSKII VI PAPENTSEV MI

Citation: Mm. Sobolev et al., RECOMBINATION-ENHANCED ANNEALING IN GAAS AND ALGAAS LAYERS, Semiconductors, 30(6), 1996, pp. 587-590

RELAXATION VIBRATIONS IN INGAASP INP (LAM BDA=1.55MU-M) HETEROLASERS WITH SATURABLE ABSORBERS/

Authors: DERYAGIN AG KUCHINSKII VI SOKOLOVSKII GS

Citation: Ag. Deryagin et al., RELAXATION VIBRATIONS IN INGAASP INP (LAM BDA=1.55MU-M) HETEROLASERS WITH SATURABLE ABSORBERS/, Pis'ma v Zurnal tehniceskoj fiziki, 22(7), 1996, pp. 44-49

LOW-THRESHOLD LASER BINARY HETEROSTRUCTUR ES OF GASB GAINASSB-ALGAINASSB PREPARED BY THE LIQUID-PHASE EPITAXY TECHNIQUE FROM ANTIMONY SOLUTIONS FUSIONS/

Authors: VASILEV VI DERYAGIN AG KUCHINSKII VI LUNEV AV SMIRNOV VM

Citation: Vi. Vasilev et al., LOW-THRESHOLD LASER BINARY HETEROSTRUCTUR ES OF GASB GAINASSB-ALGAINASSB PREPARED BY THE LIQUID-PHASE EPITAXY TECHNIQUE FROM ANTIMONY SOLUTIONS FUSIONS/, Pis'ma v Zurnal tehniceskoj fiziki, 22(2), 1996, pp. 15-18

WAVELENGTH AND POLARIZATION SWITCHING IN INGAASP INP DFB LASERS/

Authors: DERYAGIN AG KUKSENKOV DV KUCHINSKII VI PORTNOI EL SMIRNITSKII VB

Citation: Ag. Deryagin et al., WAVELENGTH AND POLARIZATION SWITCHING IN INGAASP INP DFB LASERS/, IEE proceedings. Optoelectronics, 142(1), 1995, pp. 51-54

PICOSECOND INP PHOTOSENSORS OBTAINED BY T HE HEAVY-ION DEEP IMPLANTATION TECHNIQUE

Authors: OCHIAI M RAFAILOV EU DERYAGIN AG KUCHINSKII VI PORTNOI EL MUZHUD A SOKOLOVSKII GS TEMKIN K

Citation: M. Ochiai et al., PICOSECOND INP PHOTOSENSORS OBTAINED BY T HE HEAVY-ION DEEP IMPLANTATION TECHNIQUE, Pis'ma v Zurnal tehniceskoj fiziki, 21(22), 1995, pp. 72-77

GENERATION OF 110 GHZ TRAIN OF SUBPICOSECOND PULSES IN 1.535-MU-M SPECTRAL REGION BY PASSIVELY MODELOCKED INGAASP INP LASER-DIODES/

Authors: DERYAGIN AG KUKSENKOV DV KUCHINSKII VI PORTNOI EL KHRUSHCHEV IY

Citation: Ag. Deryagin et al., GENERATION OF 110 GHZ TRAIN OF SUBPICOSECOND PULSES IN 1.535-MU-M SPECTRAL REGION BY PASSIVELY MODELOCKED INGAASP INP LASER-DIODES/, Electronics Letters, 30(4), 1994, pp. 309-311

POLARIZATION SWITCHING IN INGAASP-INP DF- LASERS WITH TENSE ACTIVE LAYER

Authors: GURIEV AI DERYAGIN AG KUKSENKOV DV KUCHINSKII VI PORTNOI EL SMIRNITSKII VB GOLIKOVA EG DURAEV VP

Citation: Ai. Guriev et al., POLARIZATION SWITCHING IN INGAASP-INP DF- LASERS WITH TENSE ACTIVE LAYER, Pis'ma v Zurnal tehniceskoj fiziki, 19(23), 1993, pp. 8-12

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