AAAAAA

   
Results: 1-15 |
Results: 15
MICRO ION-BEAM FACILITY AT THE INSTITUTE-OF-PHYSICS, BHUBANESWAR
Authors: ROUT B GHOSE SK SUNDARAVEL B KURI G MAHAPATRA DP DEV BN SEN P BAKHRU H HABERL AW
Citation: B. Rout et al., MICRO ION-BEAM FACILITY AT THE INSTITUTE-OF-PHYSICS, BHUBANESWAR, Radiation physics and chemistry, 51(4-6), 1998, pp. 677-677
X-RAY STANDING-WAVE AND ION-SCATTERING STUDIES ON AU-IMPLANTED LINBO3(0001) SINGLE-CRYSTALS
Authors: DEV BN KURI G SATYAM PV SUNDARAVEL B GOG T MATERLIK G
Citation: Bn. Dev et al., X-RAY STANDING-WAVE AND ION-SCATTERING STUDIES ON AU-IMPLANTED LINBO3(0001) SINGLE-CRYSTALS, Applied surface science, 125(2), 1998, pp. 163-172
ION DECHANNELING STUDIES OF DEFECTS IN AN ION-BEAM-SYNTHESIZED EPILAYER SANDWICH SYSTEM - SI(111) COSI2/SI/
Authors: SATYAM PV SEKAR K KURI G SUNDARAVEL B MAHAPATRA DP DEV BN
Citation: Pv. Satyam et al., ION DECHANNELING STUDIES OF DEFECTS IN AN ION-BEAM-SYNTHESIZED EPILAYER SANDWICH SYSTEM - SI(111) COSI2/SI/, Applied surface science, 125(2), 1998, pp. 173-177
LATTICE STRAIN-MEASUREMENT OF STRAINED IN0.1GA0.9AS GAAS HETEROSTRUCTURES BY RBS AND CHANNELING/
Authors: SIDDIQUI AM PATHAK AP SUNDARAVEL B DAS AK SEKAR K DEV BN ARORA BM
Citation: Am. Siddiqui et al., LATTICE STRAIN-MEASUREMENT OF STRAINED IN0.1GA0.9AS GAAS HETEROSTRUCTURES BY RBS AND CHANNELING/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 142(3), 1998, pp. 387-392
CHARACTERIZATION OF A LIQUID-PHASE-EPITAXY-GROWN AL0.2GA0.8AS FILM ONA GAAS(111) SUBSTRATE BY RBS, CHANNELING AND PIGE ANALYSES
Authors: KURI G SATYAM PV SUNDARAVEL B SEKAR K MAHAPATRA DP DEV BN
Citation: G. Kuri et al., CHARACTERIZATION OF A LIQUID-PHASE-EPITAXY-GROWN AL0.2GA0.8AS FILM ONA GAAS(111) SUBSTRATE BY RBS, CHANNELING AND PIGE ANALYSES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 140(1-2), 1998, pp. 229-234
RUTHERFORD BACKSCATTERING SPECTROMETRY AND CHANNELING STUDIES ON MEV AU-IMPLANTED GAAS(100) CRYSTALS
Authors: KURI G SUNDARAVEL B MAHAPATRA DP DEV BN
Citation: G. Kuri et al., RUTHERFORD BACKSCATTERING SPECTROMETRY AND CHANNELING STUDIES ON MEV AU-IMPLANTED GAAS(100) CRYSTALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 129(1), 1997, pp. 35-41
EFFECT OF MEV AU ION-IMPLANTATION ON THE COMPOSITION OF GAAS UPON VACUUM ANNEALING - PIXE AND XRF STUDIES
Authors: KURI G ROUT B SUNDARAVEL B MAHAPATRA DP DEV BN
Citation: G. Kuri et al., EFFECT OF MEV AU ION-IMPLANTATION ON THE COMPOSITION OF GAAS UPON VACUUM ANNEALING - PIXE AND XRF STUDIES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 119(3), 1996, pp. 403-410
MEV AS AND AU ION-IMPLANTATION IN SI, GAP, GAAS, INSB AND LINBO3 - STUDY OF RANGE AND LATTICE LOCATION
Authors: KURI G SUNDARAVEL B ROUT B MAHAPATRA DP DEV BN
Citation: G. Kuri et al., MEV AS AND AU ION-IMPLANTATION IN SI, GAP, GAAS, INSB AND LINBO3 - STUDY OF RANGE AND LATTICE LOCATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 111(3-4), 1996, pp. 234-243
SHAPE TRANSITION IN THE EPITAXIAL-GROWTH OF GOLD SILICIDE IN AU THIN-FILMS ON SI(111)
Authors: SEKAR K KURI G SATYAM PV SUNDARAVEL B MAHAPATRA DP DEV BN
Citation: K. Sekar et al., SHAPE TRANSITION IN THE EPITAXIAL-GROWTH OF GOLD SILICIDE IN AU THIN-FILMS ON SI(111), Physical review. B, Condensed matter, 51(20), 1995, pp. 14330-14336
GROWTH AND ALIGNMENT OF GOLD SILICIDE ISLANDS ON BR-PASSIVATED VICINAL SI(III) SURFACES
Authors: SEKAR K KURI G SATYAM PV SUNDARAVEL B MAHAPATRA DP DEV BN
Citation: K. Sekar et al., GROWTH AND ALIGNMENT OF GOLD SILICIDE ISLANDS ON BR-PASSIVATED VICINAL SI(III) SURFACES, Surface science, 339(1-2), 1995, pp. 96-104
EPITAXY DRIVEN FRACTAL GROWTH
Authors: SEKAR K KURI G SATYAM PV SUNDARAVEL B MAHAPATRA DP DEV BN
Citation: K. Sekar et al., EPITAXY DRIVEN FRACTAL GROWTH, Solid state communications, 96(11), 1995, pp. 871-875
A HIGH-PRECISION TECHNIQUE USING X-RAY REFLECTIVITY FOR THE MEASUREMENT OF SURFACE AND INTERFACE ROUGHNESS
Authors: SATYAM PV BAHR D GHOSE SK KURI G SUNDARAVEL B ROUT B DEV BN
Citation: Pv. Satyam et al., A HIGH-PRECISION TECHNIQUE USING X-RAY REFLECTIVITY FOR THE MEASUREMENT OF SURFACE AND INTERFACE ROUGHNESS, Current Science, 69(6), 1995, pp. 526-529
LOCATION OF TI ATOMS DIFFUSED INTO NEARLY PERFECT CRYSTALS OF LINBO3 - AN X-RAY STANDING-WAVE STUDY
Authors: GOG T HARASIMOWICZ T DEV BN MATERLIK G
Citation: T. Gog et al., LOCATION OF TI ATOMS DIFFUSED INTO NEARLY PERFECT CRYSTALS OF LINBO3 - AN X-RAY STANDING-WAVE STUDY, Europhysics letters, 25(4), 1994, pp. 253-258
X-RAY PHOTOELECTRON SPECTROSCOPIC STUDY OF SI(111) AND SI(100) SURFACES WITH CHEMICALLY ADSORBED BROMINE
Authors: SEKAR K KURI G MAHAPATRA DP DEV BN RAMANA JV KUMAR S RAJU VS
Citation: K. Sekar et al., X-RAY PHOTOELECTRON SPECTROSCOPIC STUDY OF SI(111) AND SI(100) SURFACES WITH CHEMICALLY ADSORBED BROMINE, Surface science, 302(1-2), 1994, pp. 25-36
MEV HE-4(2-IRRADIATION INDUCED EFFECTS IN CUO())
Authors: SEKAR K SATYAM PV MAHAPATRA DP DEV BN MISHRA NC ACHARYA BS SEN P
Citation: K. Sekar et al., MEV HE-4(2-IRRADIATION INDUCED EFFECTS IN CUO()), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 83(1-2), 1993, pp. 140-144
Risultati: 1-15 |