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Results:
1-15
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Results: 15
Authors:
SAMANTILLEKE AP
BOYLE MH
YOUNG J
DHARMADASA IM
Citation: Ap. Samantilleke et al., GROWTH OF N-TYPE AND P-TYPE ZNSE THIN-FILMS USING AN ELECTROCHEMICAL TECHNIQUE FOR APPLICATIONS IN LARGE-AREA OPTOELECTRONIC DEVICES, Journal of materials science. Materials in electronics, 9(3), 1998, pp. 231-235
Authors:
DHARMADASA IM
BLOMFIELD CJ
SCOTT CG
CORATGER R
AJUSTRON F
BEAUVILLAIN J
Citation: Im. Dharmadasa et al., METAL N-CDTE INTERFACES - A STUDY OF ELECTRICAL CONTACTS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY AND BALLISTIC-ELECTRON-EMISSION MICROSCOPY/, Solid-state electronics, 42(4), 1998, pp. 595-604
Authors:
CORATGER R
GIRARDIN C
BEAUVILLAIN J
DHARMADASA IM
SAMANTHILAKE AP
FROST JEF
PRIOR KA
CAVENETT BC
Citation: R. Coratger et al., SCHOTTKY-BARRIER FORMATION AT METAL N-ZNSE INTERFACES AND CHARACTERIZATION OF AU/N-ZNSE BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY/, Journal of applied physics, 81(12), 1997, pp. 7870-7875
Authors:
CAMMACK DS
MCGREGOR SM
MCCHESNEY JJ
DHARMADASA IM
CLARK SA
DUNSTAN PR
BURGESS SR
WILKS SP
ELIOTT M
Citation: Ds. Cammack et al., PHOTOEMISSION-STUDY OF THE FORMATION OF INTIMATE IN-INGAAS(100) CONTACTS AT ROOM AND CRYOGENIC TEMPERATURES, Journal of applied physics, 81(12), 1997, pp. 7876-7879
Authors:
SIRIPALA W
PERERA LDRD
DESILVA KTL
JAYANETTI JKDS
DHARMADASA IM
Citation: W. Siripala et al., STUDY OF ANNEALING EFFECTS OF CUPROUS-OXIDE GROWN BY ELECTRODEPOSITION TECHNIQUE, Solar energy materials and solar cells, 44(3), 1996, pp. 251-260
Authors:
MCCHESNEY JJ
HAIGH J
DHARMADASA IM
MOWTHORPE DJ
Citation: Jj. Mcchesney et al., ELECTROCHEMICAL GROWTH OF GASB AND INSB FOR APPLICATIONS IN INFRARED DETECTORS AND OPTICAL COMMUNICATION-SYSTEMS, Optical materials, 6(1-2), 1996, pp. 63-67
Authors:
MCGREGOR SM
DHARMADASA IM
WADSWORTH I
CARE CM
Citation: Sm. Mcgregor et al., GROWTH OF CDS AND CDTE BY ELECTROCHEMICAL TECHNIQUE FOR UTILIZATION IN THIN-FILM SOLAR-CELLS, Optical materials, 6(1-2), 1996, pp. 75-81
Authors:
DHARMADASA IM
BLOMFIELD CJ
CORATGER R
AJUSTRON E
BEAUVILLAIN J
SIMPSON J
PRIOR KA
CAVENETT BC
Citation: Im. Dharmadasa et al., MICROSCOPIC AND MACROSCOPIC INVESTIGATION OF ELECTRICAL CONTACTS TO N-TYPE AND P-TYPE ZNSE, Materials science and technology, 12(1), 1996, pp. 86-89
Authors:
BLOMFIELD CJ
DHARMADASA IM
PRIOR KA
CAVENETT BC
Citation: Cj. Blomfield et al., DISCRETE SCHOTTKY BARRIERS OBSERVED FOR THE METAL N-ZNSE(100) SYSTEM/, Journal of crystal growth, 159(1-4), 1996, pp. 727-731
Authors:
WARDLAW RS
DHARMADASA IM
Citation: Rs. Wardlaw et Im. Dharmadasa, EFFECTS OF MULTILEVEL FERMI PINNING AND AGGREGATE SURFACE-AREA ON SCHOTTKY-BARRIER HEIGHTS AT METAL SEMICONDUCTOR INTERFACES/, International journal of electronics, 81(1), 1996, pp. 59-65
Authors:
DHARMADASA IM
IVES M
BROOKS JS
FRANCE GH
BROWN SJ
Citation: Im. Dharmadasa et al., APPLICATION OF GLOW-DISCHARGE OPTICAL-EMISSION SPECTROSCOPY TO STUDY SEMICONDUCTORS AND SEMICONDUCTOR-DEVICES, Semiconductor science and technology, 10(3), 1995, pp. 369-372
Authors:
CORATGER R
AJUSTRON F
BEAUVILLAIN J
DHARMADASA IM
BLOMFIELD CJ
PRIOR KA
SIMPSON J
CAVENETT BC
Citation: R. Coratger et al., AU N-ZNSE CONTACTS STUDIED WITH USE OF BALLISTIC-ELECTRON-EMISSION MICROSCOPY/, Physical review. B, Condensed matter, 51(4), 1995, pp. 2357-2362
Authors:
DHARMADASA IM
BLOMFIELD CJ
GREGORY GE
HAIGH J
Citation: Im. Dharmadasa et al., AGING EFFECTS AND AUGER DEPTH PROFILING STUDIES OF SB N-CDTE CONTACTS/, Semiconductor science and technology, 9(2), 1994, pp. 185-187
Authors:
DHARMADASA IM
BLOMFIELD CJ
GREGORY GE
CAVENETT BC
PRIOR KA
SIMPSON J
Citation: Im. Dharmadasa et al., MICROSCOPIC AND MACROSCOPIC INVESTIGATION OF ELECTRICAL CONTACTS TO N-ZNSE, Surface and interface analysis, 21(10), 1994, pp. 718-723
Authors:
DHARMADASA IM
BLOMFIELD CJ
GREGORY GE
YOUNG J
Citation: Im. Dharmadasa et al., INFLUENCE OF CHEMICAL ETCHING ON METAL CONTACTS TO II-VI COMPOUNDS - CDTE AND ZNSE, International journal of electronics, 76(5), 1994, pp. 961-967
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