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BALLET P
DISSEIX P
LEYMARIE J
VASSON A
VASSON AM
GREY R
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Authors:
LEYMARIE J
DISSEIX P
REZKI M
MONIER C
VASSON A
VASSON AM
Citation: J. Leymarie et al., CONDUCTION-BAND OFFSET RATIO OF THE (IN,GA)AS GAAS SYSTEM AND (IN,GA)AS ALLOY PROPERTIES/, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 147-150
Authors:
DISSEIX P
LEYMARIE J
VASSON A
VASSON AM
MONIER C
GRANDJEAN N
LEROUX M
MASSIES J
Citation: P. Disseix et al., EFFECTS OF SEGREGATION ON THE OPTICAL-PROPERTIES OF (IN,GA)AS GAAS QUANTUM-WELLS GROWN BY MBE UNDER VARIOUS CONDITIONS/, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 151-154
Authors:
DISSEIX P
LEYMARIE J
VASSON A
VASSON AM
MONIER C
GRANDJEAN N
LEROUX M
MASSIES J
Citation: P. Disseix et al., OPTICAL STUDY OF SEGREGATION EFFECTS ON THE ELECTRONIC-PROPERTIES OF MOLECULAR-BEAM-EPITAXY GROWN (IN,GA)AS GAAS QUANTUM-WELLS/, Physical review. B, Condensed matter, 55(4), 1997, pp. 2406-2412
Authors:
BALLET P
DISSEIX P
VASSON A
VASSON AM
GREY R
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Authors:
DISSEIX P
LEYMARIE J
VASSON A
VASSON AM
BANVILLET H
GIL E
PIFFAULT N
CADORET R
Citation: P. Disseix et al., PHOTOLUMINESCENCE STUDIES IN STRAINED INAS INP QUANTUM-WELLS GROWN BYHYDRIDE VAPOR-PHASE EPITAXY/, Semiconductor science and technology, 8(8), 1993, pp. 1666-1670