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Results: 1-15 |
Results: 15
FILTERED SADDLE FIELD FAST ATOM BEAM DEPOSITION OF DIAMOND-LIKE CARBON-FILMS
Authors: SARANGI D PANWAR OS KUMAR S DIXIT PN BHATTACHARYYA R
Citation: D. Sarangi et al., FILTERED SADDLE FIELD FAST ATOM BEAM DEPOSITION OF DIAMOND-LIKE CARBON-FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(1), 1998, pp. 203-206
DIAMOND-LIKE CARBON-FILMS FORMED BY A FILTERED FAST ATOM BEAM SOURCE
Authors: SARANGI D PANWAR OS KUMAR S DIXIT PN BHATTACHARYYA R
Citation: D. Sarangi et al., DIAMOND-LIKE CARBON-FILMS FORMED BY A FILTERED FAST ATOM BEAM SOURCE, Surface & coatings technology, 94-5(1-3), 1997, pp. 356-361
IN-SITU DETERMINATION OF THE OPTICAL-PARAMETERS OF A THIN ABSORBING FILM BEING DEPOSITED ON A TRANSPARENT OR ABSORBING SUBSTRATE
Authors: BASU A VERMA BS DIXIT PN BHATTACHARYYA R
Citation: A. Basu et al., IN-SITU DETERMINATION OF THE OPTICAL-PARAMETERS OF A THIN ABSORBING FILM BEING DEPOSITED ON A TRANSPARENT OR ABSORBING SUBSTRATE, Indian Journal of Pure & Applied Physics, 34(7), 1996, pp. 480-488
DIAMOND-LIKE CARBON-FILMS GROWN BY VERY HIGH-FREQUENCY (100 MHZ) PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION TECHNIQUE
Authors: KUMAR S DIXIT PN SARANGI D BHATTACHARYYA R
Citation: S. Kumar et al., DIAMOND-LIKE CARBON-FILMS GROWN BY VERY HIGH-FREQUENCY (100 MHZ) PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION TECHNIQUE, Applied physics letters, 69(1), 1996, pp. 49-51
EFFECT OF HYDROGEN DILUTION ON THE DEPOSITION RATE OF HYDROGENERATED AMORPHOUS-SILICON FILMS IN A MODIFIED PULSED PLASMA DISCHARGE
Authors: MUKHERJEE C ANANDAN C SETH T DIXIT PN BHATTACHARYYA R
Citation: C. Mukherjee et al., EFFECT OF HYDROGEN DILUTION ON THE DEPOSITION RATE OF HYDROGENERATED AMORPHOUS-SILICON FILMS IN A MODIFIED PULSED PLASMA DISCHARGE, Applied physics letters, 68(6), 1996, pp. 835-837
OPTOELECTRONIC PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON FILMS GROWN USING A MODIFIED PULSED PLASMA DISCHARGE
Authors: MUKHERJEE C ANANDAN C SETH T DIXIT PN BHATTACHARYYA R
Citation: C. Mukherjee et al., OPTOELECTRONIC PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON FILMS GROWN USING A MODIFIED PULSED PLASMA DISCHARGE, Applied physics letters, 68(2), 1996, pp. 194-196
INVESTIGATIONS ON HYDROGENATED AMORPHOUS-SILICON FILMS GROWN AT HIGH-RATE IN A UHV PLASMA CVD SYSTEM
Authors: DIXIT PN PANWAR OS SATYANARAYAN BS BHATTACHARYYA R
Citation: Pn. Dixit et al., INVESTIGATIONS ON HYDROGENATED AMORPHOUS-SILICON FILMS GROWN AT HIGH-RATE IN A UHV PLASMA CVD SYSTEM, Solar energy materials and solar cells, 37(2), 1995, pp. 143-157
DIAMOND-LIKE CARBON-FILMS GROWN USING A SADDLE FIELD SOURCE
Authors: PANWAR OS SARANGI D KUMAR S DIXIT PN BHATTACHARYYA R
Citation: Os. Panwar et al., DIAMOND-LIKE CARBON-FILMS GROWN USING A SADDLE FIELD SOURCE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(5), 1995, pp. 2519-2524
HYDROGENATED AMORPHOUS-SILICON FILMS PREPARED AT LOW SUBSTRATE-TEMPERATURE ON A CATHODE OF AN ASYMMETRIC RF PLASMA CVD SYSTEM
Authors: SETH T DIXIT PN MUKHERJEE C ANANDAN C BHATTACHARYYA R
Citation: T. Seth et al., HYDROGENATED AMORPHOUS-SILICON FILMS PREPARED AT LOW SUBSTRATE-TEMPERATURE ON A CATHODE OF AN ASYMMETRIC RF PLASMA CVD SYSTEM, Thin solid films, 264(1), 1995, pp. 11-17
EFFECT OF PULSE PARAMETERS ON THE DEPOSITION RATE OF HYDROGENATED AMORPHOUS-SILICON IN A MODIFIED PULSED PLASMA DISCHARGE
Authors: ANANDAN C MUKHERJEE C SETH T DIXIT PN BHATTACHARYYA R
Citation: C. Anandan et al., EFFECT OF PULSE PARAMETERS ON THE DEPOSITION RATE OF HYDROGENATED AMORPHOUS-SILICON IN A MODIFIED PULSED PLASMA DISCHARGE, Applied physics letters, 66(1), 1995, pp. 85-87
INFRARED STUDIES OF HARD HYDROGENATED AMORPHOUS-CARBON (A-C-H) FILM AND THE EFFECT OF ARGON PLASMA TREATMENT
Authors: DIXIT PN VARMA SP PANWAR OS SETH T GUPTA D BHATTACHARYYA R
Citation: Pn. Dixit et al., INFRARED STUDIES OF HARD HYDROGENATED AMORPHOUS-CARBON (A-C-H) FILM AND THE EFFECT OF ARGON PLASMA TREATMENT, Infrared physics & technology, 35(4), 1994, pp. 617-624
ONSET OF PHOTOCONDUCTION IN HYDROGENATED AMORPHOUS-CARBON FILMS PREPARED BY RF ASYMMETRIC PECVD TECHNIQUE
Authors: DIXIT PN KUMAR S SARANGI D BHATTACHARYYA R
Citation: Pn. Dixit et al., ONSET OF PHOTOCONDUCTION IN HYDROGENATED AMORPHOUS-CARBON FILMS PREPARED BY RF ASYMMETRIC PECVD TECHNIQUE, Solid state communications, 90(7), 1994, pp. 421-423
EFFECT OF POWER AND PRESSURE ON THE PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON FILMS PREPARED BY DC GLOW-DISCHARGE
Authors: SETH T DIXIT PN PANWAR OS BHATTACHARYYA R
Citation: T. Seth et al., EFFECT OF POWER AND PRESSURE ON THE PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON FILMS PREPARED BY DC GLOW-DISCHARGE, Solar energy materials and solar cells, 31(2), 1993, pp. 215-226
MULTICHAMBER RF GLOW-DISCHARGE SYSTEM FOR MAKING AMORPHOUS-SILICON BASED DEVICES
Authors: TRIPATHI SK DEVA D KUMAR S DIXIT PN AGARWAL SC
Citation: Sk. Tripathi et al., MULTICHAMBER RF GLOW-DISCHARGE SYSTEM FOR MAKING AMORPHOUS-SILICON BASED DEVICES, Indian Journal of Pure & Applied Physics, 31(9), 1993, pp. 660-663
COMPARATIVE-STUDY OF HIGH-RATE DEPOSITED AMORPHOUS-SILICON FILMS PREPARED UNDER RF AND DC GLOW-DISCHARGE
Authors: SETH T DIXIT PN PANWAR OS BHATTACHARYYA R
Citation: T. Seth et al., COMPARATIVE-STUDY OF HIGH-RATE DEPOSITED AMORPHOUS-SILICON FILMS PREPARED UNDER RF AND DC GLOW-DISCHARGE, Indian Journal of Pure & Applied Physics, 31(5), 1993, pp. 315-318
Risultati: 1-15 |