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Results:
1-7
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Results: 7
Authors:
LEBEDEV AA
DOCARMO MC
Citation: Aa. Lebedev et Mc. Docarmo, 6H-SIC P-N STRUCTURES WITH PREDOMINATE EXCITON ELECTROLUMINESCENCE, OBTAINED BY SUBLIMATION EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 275-277
Authors:
DALY SE
MCGLYNN E
HENRY MO
CAMPION JD
MCGUIGAN KG
DOCARMO MC
NAZARE MH
Citation: Se. Daly et al., THE COMPLEXING OF OXYGEN WITH THE GROUP-II IMPURITIES BE, CD AND ZN IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 116-119
Authors:
DALY SE
HENRY MO
MCGUIGAN KG
DOCARMO MC
Citation: Se. Daly et al., A COMPLEX LUMINESCENT DEFECT IN BE-DOPED OXYGEN-RICH SILICON, Semiconductor science and technology, 11(7), 1996, pp. 996-1001
Authors:
MCGLYNN E
HENRY MO
MCGUIGAN KG
DOCARMO MC
Citation: E. Mcglynn et al., PHOTOLUMINESCENCE STUDY OF CADMIUM-RELATED DEFECTS IN OXYGEN-RICH SILICON, Physical review. B, Condensed matter, 54(20), 1996, pp. 14494-14503
Authors:
DALY SE
CAMPION JD
MCGLYNN E
HENRY MO
DOCARMO MC
NAZARE MH
Citation: Se. Daly et al., OXYGEN COMPLEXING WITH GROUP-II IMPURITIES IN SILICON, Solid state communications, 93(5), 1995, pp. 454-454
Authors:
VENTURA PJ
DOCARMO MC
ODONNELL KP
Citation: Pj. Ventura et al., EXCITATION DYNAMICS OF LUMINESCENCE FROM POROUS SILICON, Journal of applied physics, 77(1), 1995, pp. 323-326
Authors:
HENRY MO
CAMPION JD
MCGUIGAN KG
LIGHTOWLERS EC
DOCARMO MC
NAZARE MH
Citation: Mo. Henry et al., A PHOTOLUMINESCENCE STUDY OF ZN-O COMPLEXES IN SILICON, Semiconductor science and technology, 9(7), 1994, pp. 1375-1381
Risultati:
1-7
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