Authors: ORTH A REITHMAIER JP ZEH R DOLESCHEL H FORCHEL A

Citation: A. Orth et al., FIRST-ORDER GAIN-COUPLED GAINAS GAAS DISTRIBUTED-FEEDBACK LASER-DIODES PATTERNED BY FOCUSED ION-BEAM IMPLANTATION/, Applied physics letters, 69(13), 1996, pp. 1906-1908

Authors: KIESLICH A DOLESCHEL H KIESELING F REITHMAIER JP FORCHEL A

Citation: A. Kieslich et al., REDUCED LATERAL STRAGGLING OF IMPLANTATION-INDUCED DEFECTS IN III V HETEROSTRUCTURES BY ION-IMPLANTATION ALONG CHANNELING DIRECTIONS/, Applied physics letters, 68(1), 1996, pp. 102-104

Authors: KIESLICH A DOLESCHEL H REITHMAIER JP FORCHEL A STOFFEL NG

Citation: A. Kieslich et al., IMPLANTATION-INDUCED DAMAGE IN III V-HETEROSTRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 99(1-4), 1995, pp. 594-597

Authors: KIESLICH A DOLESCHEL H FALLER F FORCHEL A STOFFEL NG

Citation: A. Kieslich et al., INVESTIGATION OF THE LONGITUDINAL AND LATERAL DISTRIBUTION OF IMPLANTATION-INDUCED DAMAGE IN GAAS INGAAS HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2544-2547