Authors: DOLGINOV LM TUNITSKAYA IV POLYAKOV AY DRUZHININA LV VINOGRADOVA GV SMIRNOV NB GOVORKOV AV BORODINA OM KOZHUKHOVA EA BALMASHNOV AA MILNES AG

Citation: Lm. Dolginov et al., THE EFFECT OF GD DOPING ON CARRIER CONCENTRATION IN INGAASSB LAYERS GROWN BY LIQUID-PHASE EPITAXY, Thin solid films, 251(2), 1994, pp. 147-150

Authors: POLYAKOV AY MILNES AG SMIRNOV NB KOZHUKHOVA EA DRUZHININA LV GOVORKOV AV DOLGINOV LM TUNITSKAYA IV

Citation: Ay. Polyakov et al., PROPERTIES OF MIS STRUCTURES PREPARED ON INGAASSB QUATERNARY SOLUTIONS BY ANODIC-OXIDATION, Solid-state electronics, 37(10), 1994, pp. 1691-1694