AAAAAA
Results:
1-19
|
Results: 19
Authors:
DONOLATO C
Citation: C. Donolato, EFFECTIVE DIFFUSION LENGTH OF MULTICRYSTALLINE SOLAR-CELLS, Semiconductor science and technology, 13(7), 1998, pp. 781-787
Authors:
NIPOTI R
DONOLATO C
GOVONI D
ROSSI P
EGENI GP
RUDELLO V
Citation: R. Nipoti et al., A STUDY OF HE-INDUCED DAMAGE IN SILICON BY QUANTITATIVE-ANALYSIS OF CHARGE COLLECTION EFFICIENCY DATA( ION), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1340-1344
Authors:
DONOLATO C
Citation: C. Donolato, MODELING THE EFFECT OF DISLOCATIONS ON THE MINORITY-CARRIER DIFFUSIONLENGTH OF A SEMICONDUCTOR, Journal of applied physics, 84(5), 1998, pp. 2656-2664
Authors:
CERVELLERA F
DONOLATO C
EGENI GP
FORTUNA G
NIPOTI R
POLESELLO P
ROSSI P
RUDELLO V
VITTONE E
VIVIANI M
Citation: F. Cervellera et al., THE LEGNARO ION MICROPROBE IN LOW CURRENT EXPERIMENTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 130(1-4), 1997, pp. 25-30
Authors:
DONOLATO C
NIPOTI R
Citation: C. Donolato et R. Nipoti, SIMULATION OF PULSE-HEIGHT SPECTRA IN ION-BEAM-INDUCED CHARGE MICROSCOPY OF POLYCRYSTALLINE SILICON, Journal of applied physics, 82(2), 1997, pp. 742-747
Authors:
DONOLATO C
Citation: C. Donolato, RELATIONSHIP BETWEEN DARK CARRIER DISTRIBUTION AND PHOTOGENERATED CARRIER COLLECTION IN SOLAR-CELLS - COMMENTS, I.E.E.E. transactions on electron devices, 44(2), 1997, pp. 349-349
Authors:
DONOLATO C
Citation: C. Donolato, INCLUDING GETTER EFFECT IN A NUMERICAL CONTRAST CALCULATION FOR MICROGRAPHS - A NUMERICAL CONTRAST CALCULATION FOR ELECTRON-BEAM-INDUCED CURRENT AT GETTERED DISLOCATIONS - COMMENT, Applied physics letters, 71(15), 1997, pp. 2216-2216
Authors:
DONOLATO C
Citation: C. Donolato, MODELING ELECTROSTATIC SCANNING FORCE MICROSCOPY OF SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 99-104
Authors:
DONOLATO C
NIPOTI R
GOVONI D
EGENI GP
RUDELLO V
ROSSI P
Citation: C. Donolato et al., IMAGES OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON SOLAR-CELLS BY ELECTRON AND ION-BEAM-INDUCED CHARGE COLLECTION, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 306-310
Authors:
DONOLATO C
Citation: C. Donolato, ELECTROSTATIC TIP-SAMPLE INTERACTION IN IMMERSION FORCE MICROSCOPY OFSEMICONDUCTORS, Physical review. B, Condensed matter, 54(3), 1996, pp. 1478-1481
Authors:
DONOLATO C
Citation: C. Donolato, ANALYTICAL APPROXIMATION TO THE CAPACITANCE OF THE MICROSTRIP DISK CAPACITOR, Solid-state electronics, 39(2), 1996, pp. 314-317
Authors:
DONOLATO C
Citation: C. Donolato, APPROXIMATE EVALUATION OF CAPACITANCES BY MEANS OF GREENS RECIPROCAL THEOREM, American journal of physics, 64(8), 1996, pp. 1049-1054
Authors:
DONOLATO C
Citation: C. Donolato, ELECTROSTATIC PROBLEM OF A POINT-CHARGE IN THE PRESENCE OF A SEMIINFINITE SEMICONDUCTOR, Journal of applied physics, 78(2), 1995, pp. 684-690
Authors:
DONOLATO C
Citation: C. Donolato, THE RELATION BETWEEN EBIC CONTRAST AND RECOMBINATION VELOCITY OF A GRAIN-BOUNDARY, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 61-63
Authors:
CAVALLINI A
DONOLATO C
PIZZINI S
Citation: A. Cavallini et al., PAPERS PRESENTED AT THE 3RD INTERNATIONAL WORKSHOP ON -INJECTION-ASSESSMENT-OF-DEFECTS-IN-SEMICONDUCTORS (BIADS-93) - A NATO ADVANCED RESEARCH WORKSHOP - AUGUST 30 - SEPTEMBER 2, 1993, BOLOGNA, ITALY - FOREWORD, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 180000009-180000009
Authors:
DONOLATO C
Citation: C. Donolato, A NOTE ON THE SPATIAL-RESOLUTION OF CATHODOLUMINESCENCE IMAGES, Physica status solidi. a, Applied research, 141(2), 1994, pp. 131-132
Authors:
DONOLATO C
Citation: C. Donolato, RECIPROCITY THEOREM FOR CHARGE COLLETION BY A SURFACE WITH FINITE COLLECTION VELOCITY - APPLICATION TO GRAIN-BOUNDARIES, Journal of applied physics, 76(2), 1994, pp. 959-966
Authors:
DONOLATO C
Citation: C. Donolato, A THEORY ON THE X-RAY-SENSITIVITY OF A SILICON SURFACE-BARRIER DETECTOR INCLUDING A THERMAL CHARGE-DIFFUSION EFFECT - COMMENT, Journal of applied physics, 74(2), 1993, pp. 1462-1462
Authors:
DONOLATO C
Citation: C. Donolato, A SCANNING ELECTRON-BEAM-INDUCED OR LIGHT-BEAM-INDUCED CURRENT METHODFOR DETERMINATION OF GRAIN-BOUNDARY RECOMBINATION VELOCITY IN POLYCRYSTALLINE SEMICONDUCTORS - COMMENTS, I.E.E.E. transactions on electron devices, 40(6), 1993, pp. 1190-1191
Risultati:
1-19
|