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Authors: GREENE LH DORSTEN JF ROSHCHIN IV ABEYTA AC TANZER TA FELDMANN WL BOHN PW

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Authors: MASLAR JE DORSTEN JF BOHN PW AGARWALA S ADESIDA I CANEAU C BHAT R

Citation: Je. Maslar et al., STRUCTURAL AND ELECTRONIC EFFECTS OF ARGON SPUTTERING AND REACTIVE ION ETCHING ON IN0.53GA0.47AS AND IN0.52AL0.48AS STUDIED BY INELASTIC LIGHT-SCATTERING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 988-994

Authors: DORSTEN JF MASLAR JE BOHN PW

Citation: Jf. Dorsten et al., NEAR-SURFACE ELECTRONIC-STRUCTURE IN GAAS (100) MODIFIED WITH SELF-ASSEMBLED MONOLAYERS OF OCTADECYLTHIOL, Applied physics letters, 66(14), 1995, pp. 1755-1757

Authors: MASLAR JE DORSTEN JF BOHN PW AGARWALA S ADESIDA I CANEAU C BHAT R

Citation: Je. Maslar et al., ELECTRON-PHONON INTERACTIONS IN N-TYPE IN0.53GA0.47AS AND IN0.52AL0.48AS STUDIED BY INELASTIC LIGHT-SCATTERING, Physical review. B, Condensed matter, 50(23), 1994, pp. 17143-17150

Authors: MASLAR JE DORSTEN JF BOHN PW AGARWALA S ADESIDA I CANEAU C BHAT R

Citation: Je. Maslar et al., PHONON-ELECTRON INTERACTIONS IN THE 2-DIMENSIONAL ELECTRON-GAS IN INGAAS-INALAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR STRUCTURES STUDIEDBY RAMAN-SCATTERING, Applied physics letters, 63(14), 1993, pp. 1909-1911