AAAAAA

   
Results: 1-6 |
Results: 6

Authors: HARRINGTON WL MAGEE CW PAWLIK M DOWNEY DF OSBURN CM FELCH SB
Citation: Wl. Harrington et al., TECHNIQUES AND APPLICATIONS OF SECONDARY-ION MASS-SPECTROMETRY AND SPREADING RESISTANCE PROFILING TO MEASURE ULTRASHALLOW JUNCTION IMPLANTSDOWN TO 0.5 KEV B AND BF2, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 286-291

Authors: FELCH SB LEE BS DARYANANI SL DOWNEY DF MATYI RJ
Citation: Sb. Felch et al., CHARACTERIZATION OF ULTRA-SHALLOW P(-N JUNCTIONS FORMED BY PLASMA DOPING WITH BF3 AND N-2 PLASMAS()), Materials chemistry and physics, 54(1-3), 1998, pp. 37-43

Authors: DOWNEY DF OSBURN CM CUMMINGS JJ DARYANANI S FALK SW
Citation: Df. Downey et al., DOSE-RATE EFFECTS ON THE FORMATION OF ULTRA-SHALLOW JUNCTIONS WITH LOW-ENERGY B+ AND BF2+ ION IMPLANTS, Thin solid films, 308, 1997, pp. 562-569

Authors: DOWNEY DF OSBURN CM MARCUS SD
Citation: Df. Downey et al., ULTRASHALLOW JUNCTION FORMATION BY ION IMPLANT AND RTA, Solid state technology, 40(12), 1997, pp. 71

Authors: FROST MR HARRINGTON WL DOWNEY DF WALTHER SR
Citation: Mr. Frost et al., SURFACE METAL CONTAMINATION DURING ION-IMPLANTATION - COMPARISON OF MEASUREMENTS BY SECONDARY-ION MASS-SPECTROSCOPY, TOTAL-REFLECTION X-RAY-FLUORESCENCE SPECTROMETRY, AND VAPOR-PHASE DECOMPOSITION USED IN CONJUNCTION WITH GRAPHITE-FURNACE ATOMIC-ABSORPTION SPECTROMETRY AND INDUCTIVELY-COUPLED PLASMA-MASS SPECTROMETRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 329-335

Authors: DOWNEY DF ANGEL GC
Citation: Df. Downey et Gc. Angel, METALS CONTAMINATION IN HIGH AND MEDIUM CURRENT IMPLANTERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 68-74
Risultati: 1-6 |