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Authors: BERTRAND N DREVILLON B GHEORGHIU A SENEMAUD C MARTINU L KLEMBERGSAPIEHA JE
Citation: N. Bertrand et al., ADHESION IMPROVEMENT OF PLASMA-DEPOSITED SILICA THIN-FILMS ON STAINLESS-STEEL SUBSTRATE STUDIED BY X-RAY PHOTOEMISSION SPECTROSCOPY AND IN-SITU INFRARED ELLIPSOMETRY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(1), 1998, pp. 6-12

Authors: BERTRAND N DREVILLON B BULKIN P
Citation: N. Bertrand et al., IN-SITU INFRARED ELLIPSOMETRY STUDY OF THE GROWTH OF PLASMA-DEPOSITEDSILICA THIN-FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(1), 1998, pp. 63-71

Authors: KILDEMO M DREVILLON B
Citation: M. Kildemo et B. Drevillon, REAL-TIME CONTROL OF THE DEPOSITION OF OPTICAL COATINGS BY MULTIWAVELENGTH ELLIPSOMETRY, Surface & coatings technology, 101(1-3), 1998, pp. 480-485

Authors: COMPAIN E DREVILLON B HUC J PAREY JY BOUREE JE
Citation: E. Compain et al., COMPLETE MUELLER MATRIX MEASUREMENT WITH A SINGLE HIGH-FREQUENCY MODULATION, Thin solid films, 313, 1998, pp. 47-52

Authors: KILDEMO M DREVILLON B HUNDERI O
Citation: M. Kildemo et al., A DIRECT ROBUST FEEDBACK METHOD FOR GROWTH-CONTROL OF OPTICAL COATINGS BY MULTIWAVELENGTH ELLIPSOMETRY, Thin solid films, 313, 1998, pp. 484-489

Authors: DREVILLON B
Citation: B. Drevillon, SPECTROSCOPIC ELLIPSOMETRY IN THE INFRARED RANGE, Thin solid films, 313, 1998, pp. 625-630

Authors: HEITZ T DREVILLON B
Citation: T. Heitz et B. Drevillon, IN-SITU INFRARED ELLIPSOMETRY STUDY OF THE GROWTH OF HYDROGENATED AMORPHOUS-CARBON THIN-FILMS, Thin solid films, 313, 1998, pp. 704-707

Authors: COMPAIN E DREVILLON B
Citation: E. Compain et B. Drevillon, HIGH-FREQUENCY MODULATION OF THE 4 STATES OF POLARIZATION OF LIGHT WITH A SINGLE-PHASE MODULATOR, Review of scientific instruments, 69(4), 1998, pp. 1574-1580

Authors: BULKIN P BRENOT R DREVILLON B VANDERHAGHEN R
Citation: P. Bulkin et al., STRUCTURE AND TRANSPORT-PROPERTIES OF INTEGRATED DISTRIBUTED ELECTRON-CYCLOTRON-RESONANCE GROWN MICROCRYSTALLINE SILICON, Journal of non-crystalline solids, 231(3), 1998, pp. 268-272

Authors: BRENOT R BULKIN P CABARROCAS PRI DREVILLON B VANDERHAGHEN R
Citation: R. Brenot et al., IN-SITU CHARACTERIZATION OF MICROCRYSTALLINE SILICON BY TIME-RESOLVEDMICROWAVE CONDUCTIVITY, Journal of non-crystalline solids, 230, 1998, pp. 1001-1005

Authors: LAROCQUE AGD BERTRAND N BONNEFONT PA BULKIN P DREVILLON B SENEMAUD C
Citation: Agd. Larocque et al., X-RAY PHOTOELECTRON-SPECTRA OF ADHESION-ENHANCED A-SI-H ON STAINLESS-STEEL INDUCED BY PLASMA TREATMENTS, Journal of non-crystalline solids, 230, 1998, pp. 59-62

Authors: BOUREE JE HEITZ T GODET C DREVILLON B CONDE JP CHU V BERBERANSANTOS MN FEDOROV A
Citation: Je. Bouree et al., PHOTOLUMINESCENCE OF POLYMER-LIKE AMORPHOUS-CARBON FILMS GROWN IN DIFFERENT PLASMA REACTORS, Journal of non-crystalline solids, 230, 1998, pp. 574-578

Authors: HEITZ T DREVILLON B BOUREE JE GODET C
Citation: T. Heitz et al., EARLY STAGES OF THE GROWTH OF HYDROGENATED AMORPHOUS-CARBON INVESTIGATED BY IN-SITU INFRARED ELLIPSOMETRY, Journal of non-crystalline solids, 230, 1998, pp. 636-640

Authors: GODET C HEITZ T BOUREE JE DREVILLON B CLERC C
Citation: C. Godet et al., GROWTH AND COMPOSITION OF DUAL-PLASMA POLYMER-LIKE AMORPHOUS-CARBON FILMS, Journal of applied physics, 84(7), 1998, pp. 3919-3932

Authors: HEITZ T DREVILLON B BOUREE JE GODET C
Citation: T. Heitz et al., IN-SITU INFRARED ELLIPSOMETRY STUDY OF HYDROGENATED AMORPHOUS CARBON SI INTERFACE FORMATION/, Applied physics letters, 72(7), 1998, pp. 780-782

Authors: COMPAIN E DREVILLON B
Citation: E. Compain et B. Drevillon, BROAD-BAND DIVISION-OF-AMPLITUDE POLARIMETER BASED ON UNCOATED PRISMS, Applied optics, 37(25), 1998, pp. 5938-5944

Authors: KILDEMO M BRENOT R DREVILLON B
Citation: M. Kildemo et al., SPECTROELLIPSOMETRIC METHOD FOR PROCESS MONITORING SEMICONDUCTOR THIN-FILMS AND INTERFACES, Applied optics, 37(22), 1998, pp. 5145-5149

Authors: KILDEMO M HUNDERI O DREVILLON B
Citation: M. Kildemo et al., APPROXIMATION OF REFLECTION COEFFICIENTS FOR RAPID REAL-TIME CALCULATION OF INHOMOGENEOUS FILMS, Journal of the Optical Society of America. A, Optics, image science,and vision., 14(4), 1997, pp. 931-939

Authors: PONCINEPAILLARD F VALLON S DREVILLON B
Citation: F. Poncinepaillard et al., ILLUSTRATION OF SURFACE CROSS-LINKING OF DIFFERENT POLYMERS TREATED IN ARGON PLASMA, Macromolecular chemistry and physics, 198(8), 1997, pp. 2439-2456

Authors: VALLON S JOUBERT O VALLIER L FERRIEU F DREVILLON B BLAYO N
Citation: S. Vallon et al., REAL-TIME ULTRAVIOLET ELLIPSOMETRY MONITORING OF GATE PATTERNING IN AHIGH-DENSITY PLASMA, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 865-870

Authors: ETEMADI R GODET C PERRIN J DREVILLON B HUC J PAREY JY ROSTAING JC COEURET F
Citation: R. Etemadi et al., DUAL-PLASMA REACTOR FOR LOW-TEMPERATURE DEPOSITION OF WIDE BAND-GAP SILICON ALLOYS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(2), 1997, pp. 320-331

Authors: BERTRAND N BULKIN P DREVILLON B LUCAS S BENAYOUN S
Citation: N. Bertrand et al., IN-SITU INFRARED ELLIPSOMETRY STUDY OF PLASMA PROCESSING OF METALLIC SURFACES, Surface & coatings technology, 94-5(1-3), 1997, pp. 362-367

Authors: VALLON S DREVILLON B PONCINEPAILLARD F
Citation: S. Vallon et al., IN-SITU SPECTROELLIPSOMETRY STUDY OF THE CROSS-LINKING OF POLYPROPYLENE BY AN ARGON PLASMA, Applied surface science, 108(1), 1997, pp. 177-185

Authors: BULKIN P BERTRAND N DREVILLON B ROSTAING JC DELMOTTE F HUGON MC AGIUS B
Citation: P. Bulkin et al., PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SILICA THIN-FILMS IN AN INTEGRATED DISTRIBUTED ELECTRON-CYCLOTRON-RESONANCE REACTOR, Thin solid films, 308, 1997, pp. 63-67

Authors: DREVILLON B
Citation: B. Drevillon, THIN-FILM MATERIALS FOR LARGE-AREA ELECTRONICS, Thin solid films, 296(1-2), 1997, pp. 1-1
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