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Results: 51-75/75
Authors:
SHIRAI H
OSSIKOVSKI R
DREVILLON B
Citation: H. Shirai et al., IN-SITU STUDY OF THE INTERFACES BETWEEN PLASMA-DEPOSITED AMORPHOUS-SILICON AND SILICON DIOXIDE BY UV-IR SPECTROELLIPSOMETRY, JPN J A P 1, 33(7B), 1994, pp. 4177-4180
Authors:
SHIRAI H
DREVILLON B
SHIMIZU I
Citation: H. Shirai et al., ROLE OF HYDROGEN PLASMA DURING GROWTH OF HYDROGENATED MICROCRYSTALLINE SILICON - IN-SITU UV-VISIBLE AND INFRARED ELLIPSOMETRY STUDY, JPN J A P 1, 33(10), 1994, pp. 5590-5598
Authors:
SHIRAI H
DREVILLON B
Citation: H. Shirai et B. Drevillon, SILICON-HYDROGEN (SIHN, (N=1,2,3)) BONDING CONFIGURATIONS IN VERY THIN HYDROGENATED AMORPHOUS-SILICON FILMS DEPOSITED ON VARIOUS KINDS OF SUBSTRATES UNDER DIFFERENT SIH4 DILUTION CONDITIONS, JPN J A P 2, 33(11B), 1994, pp. 120001577-120001580
Authors:
VALLON S
DREVILLON B
Citation: S. Vallon et B. Drevillon, ADHESION OF DIELECTRIC THIN-FILMS ON POLYMER SUBSTRATES STUDIED BY UV-VISIBLE AND INFRARED ELLIPSOMETRY, Le Vide, les couches minces, (272), 1994, pp. 378-381
Authors:
DREVILLON B
Citation: B. Drevillon, IN-SITU SPECTROSCOPIC ELLIPSOMETRY STUDIES OF INTERFACES OF THIN-FILMS DEPOSITED BY PECVD, Thin solid films, 241(1-2), 1994, pp. 234-239
Authors:
OSSIKOVSKI R
BLAYOI N
DREVILLON B
FIRON M
DELAHAYE B
MAYEUX A
Citation: R. Ossikovski et al., DETERMINATION OF THE COMPOSITION AND THICKNESS OF BOROPHOSPHOSILICATEGLASS-FILMS BY INFRARED ELLIPSOMETRY, Applied physics letters, 65(10), 1994, pp. 1236-1238
Authors:
OSSIKOVSKI R
SHIRAI H
DREVILLON B
Citation: R. Ossikovski et al., IN-SITU INVESTIGATION OF AMORPHOUS SILICON-SILICON DIOXIDE INTERFACESBY INFRARED ELLIPSOMETRY, Applied physics letters, 64(14), 1994, pp. 1815-1817
Authors:
VALLON S
DREVILLON B
ROSTAING JC
SENEMAUD C
GHEORGHIU A
Citation: S. Vallon et al., USE OF PLASMA TREATMENT TO IMPROVE ADHESI ON OF HYDROGENATED AMORPHOUS-SILICON ALLOYS TO POLYMERS, Le Vide, (268), 1993, pp. 46-48
Authors:
DREVILLON B
Citation: B. Drevillon, PHASE-MODULATED ELLIPSOMETRY FROM THE ULTRAVIOLET TO THE INFRARED - IN-SITU APPLICATION TO THE GROWTH OF SEMICONDUCTORS, Progress in crystal growth and characterization of materials, 27(1), 1993, pp. 1-87
Authors:
VALLON S
DREVILLON B
SENEMAUD C
GHEORGHIU A
YAKOVLEV V
Citation: S. Vallon et al., ADHESION OF A THIN SILICON-OXIDE FILM ON A POLYCARBONATE SUBSTRATE, Journal of electron spectroscopy and related phenomena, 64-5, 1993, pp. 849-856
Authors:
LAYADI N
CABARROCAS PRI
YAKOVLEV V
DREVILLON B
Citation: N. Layadi et al., EFFECTS OF UV-LIGHT ON THE DEPOSITION KINETICS AND OPTOELECTRONIC PROPERTIES OF A-SI-H FILMS DEPOSITED BY RF GLOW-DISCHARGE, Applied surface science, 69(1-4), 1993, pp. 262-266
Authors:
ROSTAING JC
COEURET F
DREVILLON B
ETEMADI R
GODET C
HUC J
PAREY JY
YAKOVLEV VA
Citation: Jc. Rostaing et al., SILICON-BASED, PROTECTIVE TRANSPARENT MULTILAYER COATINGS DEPOSITED AT HIGH-RATE ON OPTICAL POLYMERS BY DUAL-MODE MW RF PECVD/, Thin solid films, 236(1-2), 1993, pp. 58-63
Authors:
DREVILLON B
ROSTAING JC
VALLON S
Citation: B. Drevillon et al., INVESTIGATION OF THE ADHESION MECHANISMS OF SILICON ALLOY THIN-FILMS ON POLYMER SUBSTRATES BY IR ELLIPSOMETRY, Thin solid films, 236(1-2), 1993, pp. 204-208
Authors:
CANILLAS A
PASCUAL E
DREVILLON B
Citation: A. Canillas et al., AN IR PHASE-MODULATED ELLIPSOMETER USING A FOURIER-TRANSFORM SPECTROMETER FOR IN-SITU APPLICATIONS, Thin solid films, 234(1-2), 1993, pp. 318-322
Authors:
OSSIKOVSKI R
SHIRAI H
DREVILLON B
Citation: R. Ossikovski et al., IN-SITU INVESTIGATION BY IR ELLIPSOMETRY OF THE GROWTH AND INTERFACESOF AMORPHOUS-SILICON AND RELATED MATERIALS, Thin solid films, 234(1-2), 1993, pp. 363-366
Authors:
SEGAUD JP
DREVILLON B
PASCUAL E
OSSIKOVSKI R
MONNIER G
RIMBOURG L
Citation: Jp. Segaud et al., SPECTROSCOPIC VARIATIONS OF OPTICAL-CONSTANT AND EMISSIVITY OF PT-AL2O3 CERMET THIN-FILMS, Thin solid films, 234(1-2), 1993, pp. 503-507
Authors:
VALLON S
DREVILLON B
ROSTAING JC
Citation: S. Vallon et al., ELLIPSOMETRY STUDY OF THE ADHESION OF DIELECTRIC THIN-FILMS ON POLYMER SUBSTRATES, Thin solid films, 233(1-2), 1993, pp. 256-259
Authors:
LAYADI N
CABARROCAS PRI
YAKOVLEV V
DREVILLON B
Citation: N. Layadi et al., STUDY BY REAL-TIME ELLIPSOMETRY OF THE GROWTH OF AMORPHOUS AND MICROCRYSTALLINE SILICON THIN-FILMS COMBINING GLOW-DISCHARGE DECOMPOSITION AND UV-LIGHT IRRADIATION, Thin solid films, 233(1-2), 1993, pp. 281-285
Authors:
CANILLAS A
PASCUAL E
DREVILLON B
Citation: A. Canillas et al., PHASE-MODULATED ELLIPSOMETER USING A FOURIER-TRANSFORM INFRARED SPECTROMETER FOR REAL-TIME APPLICATIONS, Review of scientific instruments, 64(8), 1993, pp. 2153-2159
Authors:
OSSIKOVSKI R
SHIRAI H
DREVILLON B
Citation: R. Ossikovski et al., IN-SITU INVESTIGATION OF AMORPHOUS-SILICON - SILICON DIOXIDE INTERFACES BY INFRARED ELLIPSOMETRY, Journal of non-crystalline solids, 166, 1993, pp. 825-828
Authors:
SOLOMON I
DREVILLON B
SHIRAI H
LAYADI N
Citation: I. Solomon et al., PLASMA DEPOSITION OF MICROCRYSTALLINE SILICON - THE SELECTIVE ETCHINGMODEL, Journal of non-crystalline solids, 166, 1993, pp. 989-992
Authors:
OSSIKOVSKI R
DREVILLON B
PERRIN J
Citation: R. Ossikovski et al., IN-SITU INFRARED ELLIPSOMETRY STUDY OF THE HYDROGEN INCORPORATION IN P-DOPED AMORPHOUS-SILICON AND P-I INTERFACES, Journal of non-crystalline solids, 166, 1993, pp. 107-110
Authors:
SHIRAI H
DREVILLON B
LAYADI N
CABARROCAS PRI
Citation: H. Shirai et al., IN-SITU UV-VISIBLE AND INFRARED ELLIPSOMETRY STUDY OF THE INFLUENCE OF SILANE DILUTION ON THE GROWTH OF HYDROGENATED AMORPHOUS-SILICON, Journal of non-crystalline solids, 166, 1993, pp. 119-122
Authors:
YAKOVLEV V
DREVILLON B
LAYADI N
CABARROCAS PR
Citation: V. Yakovlev et al., REAL-TIME SPECTROELLIPSOMETRY INVESTIGATION OF THE INTERACTION OF SILANE WITH A PD THIN-FILM - FORMATION OF PALLADIUM SILICIDES, Journal of applied physics, 74(4), 1993, pp. 2535-2542
Authors:
SHIRAI H
DREVILLON B
OSSIKOVSKI R
Citation: H. Shirai et al., INSITU INVESTIGATION OF AMORPHOUS-SILICON SILICON-NITRIDE INTERFACES BY INFRARED ELLIPSOMETRY, Applied physics letters, 62(22), 1993, pp. 2833-2835