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Results:
1-16
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Results: 16
Authors:
DRUSEDAU TP
LOHMANN M
GARKE B
Citation: Tp. Drusedau et al., DECAY LENGTH OF THE PRESSURE-DEPENDENT DEPOSITION RATE FOR MAGNETRON SPUTTERING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2728-2732
Authors:
LATUSKE HM
DRUSEDAU TP
Citation: Hm. Latuske et Tp. Drusedau, ELECTRONIC TRANSPORT BY ULTRATHIN MOLYBDENUM LAYERS BURIED IN AMORPHOUS-SILICON, Physical review. B, Condensed matter, 58(16), 1998, pp. 10933-10941
Authors:
DRUSEDAU TP
BLASING J
GNASER H
Citation: Tp. Drusedau et al., ALUMINUM MEDIATED LOW-TEMPERATURE GROWTH OF CRYSTALLINE SILICON BY PLASMA-ENHANCED CHEMICAL-VAPOR AND SPUTTER-DEPOSITION, Applied physics letters, 72(12), 1998, pp. 1510-1512
Authors:
JOHN TM
VEIT P
ANTON R
DRUSEDAU TP
Citation: Tm. John et al., GERMANIUM-CARBON MULTILAYER FILMS PREPARED BY MAGNETRON SPUTTERING - STRUCTURE AND THERMALLY-INDUCED FORMATION OF GE-NANOCRYSTALS, Thin solid films, 296(1-2), 1997, pp. 69-71
Authors:
DRUSEDAU TP
KLABUNDE F
VEIT P
HEMPEL T
Citation: Tp. Drusedau et al., INVESTIGATIONS ON MICROSTRUCTURE, SURFACE-TOPOGRAPHY, AND GROWTH-PROCESS OF SPUTTERED MOLYBDENUM SHOWING TEXTURE TURNOVER, Physica status solidi. a, Applied research, 161(1), 1997, pp. 167-184
Authors:
DRUSEDAU TP
KLABUNDE F
LOHMANN M
BLASING J
Citation: Tp. Drusedau et al., A NOVEL TYPE OF TEXTURE IN MOLYBDENUM THIN-FILMS, Physica status solidi. b, Basic research, 196(2), 1996, pp. 21-23
Authors:
DRUSEDAU TP
JOHN TM
ANTON R
BLASING J
Citation: Tp. Drusedau et al., THERMALLY-INDUCED CRYSTALLIZATION OF GERMANIUM IN SPUTTERED CARBON-GERMANIUM MULTILAYERS, Physica status solidi. b, Basic research, 196(1), 1996, pp. 1-5
Authors:
FREISTEDT H
STOLZE F
ZACHARIAS M
BLASING J
DRUSEDAU TP
Citation: H. Freistedt et al., THE FORMATION OF GERMANIUM NANOCRYSTALS BY THERMAL ANNEALING OF A-SIOX-H A-GEOX-H MULTILAYERS/, Physica status solidi. b, Basic research, 193(2), 1996, pp. 375-389
Authors:
DRUSEDAU TP
Citation: Tp. Drusedau, OBSERVATION OF ZERO DIFFERENTIAL RESISTIVITY IN A-SI-H BARRIERS - ON THE ABSENCE OF QUANTUM CONFINEMENT IN AMORPHOUS-SEMICONDUCTORS FOR HIGH FIELDS, Journal of non-crystalline solids, 200, 1996, pp. 782-786
Authors:
DRUSEDAU TP
PANCKOW AN
KLABUNDE F
Citation: Tp. Drusedau et al., THE HYDROGENATED AMORPHOUS SILICON NANODISPERSE METAL (SIMAL) SYSTEM - FILMS OF UNIQUE ELECTRONIC-PROPERTIES/, Journal of non-crystalline solids, 200, 1996, pp. 829-832
Authors:
DRUSEDAU TP
WICKBOLDT P
CHEN JH
PANG DW
FREISTEDT H
BLASING J
BOCK W
Citation: Tp. Drusedau et al., PLASMA-DEPOSITED NONSTOICHIOMETRIC HYDROGENATED GERMANIUM SULFIDE A-GE1-XSX-H (X-LESS-THAN-0.3), Journal of non-crystalline solids, 200, 1996, pp. 111-114
Authors:
DRUSEDAU TP
Citation: Tp. Drusedau, ELECTRONIC TRANSPORT THROUGH SILICON (A-SI-H) BARRIERS IN HYDROGENATED AMORPHOUS-GERMANIUM (A-GE-H), Physica status solidi. b, Basic research, 187(1), 1995, pp. 117-127
Authors:
DRUSEDAU TP
ANNEN A
SCHRODER B
FREISTEDT H
Citation: Tp. Drusedau et al., VIBRATIONAL, OPTICAL AND ELECTRONIC-PROPERTIES OF THE HYDROGENATED AMORPHOUS GERMANIUM-CARBON ALLOY SYSTEM, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 69(1), 1994, pp. 1-20
Authors:
DRUSEDAU TP
PANCKOW AN
Citation: Tp. Drusedau et An. Panckow, CURRENT FLUCTUATIONS AND SWITCHING EFFECTS IN HYDROGENATED AMORPHOUS-SILICON MOLYBDENUM MULTILAYER THIN-FILMS, Philosophical magazine letters, 69(6), 1994, pp. 333-341
Authors:
PANCKOW AN
BLASING J
DRUSEDAU TP
Citation: An. Panckow et al., A POSITION DETECTOR BASED ON THE LATERAL PHOTOEFFECT IN A-SI-H METAL (TI,MO) MULTILAYERS/, Journal of non-crystalline solids, 166, 1993, pp. 845-848
Authors:
ZACHARIAS M
FREISTEDT H
STOLZE F
DRUSEDAU TP
ROSENBAUER M
STUTZMANN M
Citation: M. Zacharias et al., PROPERTIES OF SPUTTERED A-SIOX-H ALLOYS WITH A VISIBLE LUMINESCENCE, Journal of non-crystalline solids, 166, 1993, pp. 1089-1092
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