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Results:
1-10
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Results: 10
Authors:
DUBECKY F
FORNARI R
DARMO J
PIKNA M
GOMBIA E
KREMPASKY M
PELFER PG
SEKACOVA M
HUDEK P
RUCEK M
Citation: F. Dubecky et al., ELECTRICAL AND DETECTION PROPERTIES OF PARTICLE DETECTORS BASED ON LEC SEMIINSULATING INP, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 408(2-3), 1998, pp. 491-495
Authors:
MUDRON J
MULLEROVA J
DUBECKY F
Citation: J. Mudron et al., OPTICAL-PROPERTIES OF SEMIINSULATING GAAS IRRADIATED BY NEUTRONS, Solid-state electronics, 42(2), 1998, pp. 243-246
Authors:
DARMO J
DUBECKY F
HARDTDEGEN H
HOLLFELDER M
SCHMIDT R
Citation: J. Darmo et al., DEEP-LEVEL STATES IN MOVPE ALGAAS - THE INFLUENCE OF CARRIER GAS, Journal of crystal growth, 186(1-2), 1998, pp. 13-20
Authors:
DARMO J
DUBECKY F
KORDOS P
FORSTER A
Citation: J. Darmo et al., ANNEALING EFFECT ON CONCENTRATION OF EL6-LIKE DEEP-LEVEL STATE IN LOW-TEMPERATURE-GROWN MOLECULAR-BEAM EPITAXIAL GAAS, Applied physics letters, 72(5), 1998, pp. 590-592
Authors:
DUBECKY F
KREMPASKY M
PELFER PG
DARMO J
PIKNA M
SATKA A
SEKACOVA M
RUCEK M
Citation: F. Dubecky et al., GAAS DETECTORS FOR HARD X-RAY ASTRONOMY, Nuclear physics. B, 1997, pp. 368-371
Authors:
DUBECKY F
DARMO J
HLAVAC S
BENOVIC M
PIKNA M
PELFER PG
FORSTER A
KORDOS P
Citation: F. Dubecky et al., DETECTION PROPERTIES OF LEC SI GAAS RADIATION DETECTORS WITH THE SYMMETRICAL CONTACT CONFIGURATION, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 377(2-3), 1996, pp. 475-478
Authors:
THURZO I
GMUCOVA K
DUBECKY F
DARMO J
Citation: I. Thurzo et al., THERMAL CURRENTS FROM UNDOPED SEMIINSULATING GAAS MONITORED BY CHARGEDEEP-LEVEL TRANSIENT SPECTROSCOPY, International journal of modern physics b, 9(23), 1995, pp. 3099-3114
Authors:
DARMO J
DUBECKY F
KORDOS P
FORSTER A
LUTH H
Citation: J. Darmo et al., DEEP-LEVEL STATES AND ELECTRICAL-PROPERTIES OF GAAS GROWN AT 250-DEGREES-C, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 393-396
Authors:
DUBECKY F
DARMO J
BETKO J
MOZOLOVA Z
PELFER PG
Citation: F. Dubecky et al., C-V ANALYSIS OF THE SCHOTTKY-BARRIER IN UNDOPED SEMIINSULATING GAAS, Semiconductor science and technology, 9(9), 1994, pp. 1654-1658
Authors:
DUBECKY F
NOVAK J
KORDOS P
Citation: F. Dubecky et al., AN EFFICIENT AND LOW-COST OPTICAL-EXCITATION SYSTEM - APPLICATION TO DEEP-LEVEL SPECTROSCOPY, Measurement science & technology, 4(4), 1993, pp. 538-540
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