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Results: 1-12 |
Results: 12
PURE SILICON PLASMA IN A HELICON PLASMA DEPOSITION SYSTEM
Authors: DURANDET A DAVIS CA BOSWELL RW
Citation: A. Durandet et al., PURE SILICON PLASMA IN A HELICON PLASMA DEPOSITION SYSTEM, Applied physics letters, 70(14), 1997, pp. 1814-1816
FABRICATION AND CHARACTERIZATION OF A PLANAR GRADIENT-INDEX, PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION LENS
Authors: BELTRAMI DR LOVE JD DURANDET A SAMOC A COGSWELL CJ
Citation: Dr. Beltrami et al., FABRICATION AND CHARACTERIZATION OF A PLANAR GRADIENT-INDEX, PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION LENS, Applied optics, 36(28), 1997, pp. 7143-7149
NEW TECHNOLOGY FOR PACVD
Authors: MCKENZIE DR MCFALL WD SAINTY WG YIN Y DURANDET A BOSWELL RW
Citation: Dr. Mckenzie et al., NEW TECHNOLOGY FOR PACVD, Surface & coatings technology, 82(3), 1996, pp. 326-333
SYNTHESIS OF CUBIC BORON-NITRIDE THIN-FILMS
Authors: MCKENZIE DR MCFALL WD REISCH S JAMES BW FALCONER IS BOSWELL RW PERSING H PERRY AJ DURANDET A
Citation: Dr. Mckenzie et al., SYNTHESIS OF CUBIC BORON-NITRIDE THIN-FILMS, Surface & coatings technology, 78(1-3), 1996, pp. 255-262
EFFECT OF ION ENERGY ON THE OPTICAL AND STRUCTURAL-PROPERTIES OF SIO2GROWN BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
Authors: DURANDET A MCKENZIE DR
Citation: A. Durandet et Dr. Mckenzie, EFFECT OF ION ENERGY ON THE OPTICAL AND STRUCTURAL-PROPERTIES OF SIO2GROWN BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 80(8), 1996, pp. 4707-4714
PLANAR GRADED-INDEX (GRIN) PECVD LENS
Authors: BELTRAMI DR LOVE JD DURANDET A SAMOC A SAMOC M LUTHERDAVIES B BOSWELL RW
Citation: Dr. Beltrami et al., PLANAR GRADED-INDEX (GRIN) PECVD LENS, Electronics Letters, 32(6), 1996, pp. 549-550
UV-INDUCED INDEX CHANGE IN HYDROGEN-FREE GERMANE-SILICATE WAVE-GUIDES
Authors: JARVIS RA LOVE JD DURANDET A CONWAY GD BOSWELL RW
Citation: Ra. Jarvis et al., UV-INDUCED INDEX CHANGE IN HYDROGEN-FREE GERMANE-SILICATE WAVE-GUIDES, Electronics Letters, 32(6), 1996, pp. 550-552
SILICA BURIED-CHANNEL WAVE-GUIDES FABRICATED AT LOW-TEMPERATURE USINGPECVD
Authors: DURANDET A PERRY A BOSWELL R LADOUCEUR F LOVE J FAITH M KEMENY P MA X AUSTIN M
Citation: A. Durandet et al., SILICA BURIED-CHANNEL WAVE-GUIDES FABRICATED AT LOW-TEMPERATURE USINGPECVD, Electronics Letters, 32(4), 1996, pp. 326-327
INVESTIGATION OF SILICON TRANSPORT IN THE NEUTRAL BACKGROUND OF A PLASMA ACTIVATED REACTIVE EVAPORATION SYSTEM
Authors: HIGGINS B DURANDET A BOSWELL R
Citation: B. Higgins et al., INVESTIGATION OF SILICON TRANSPORT IN THE NEUTRAL BACKGROUND OF A PLASMA ACTIVATED REACTIVE EVAPORATION SYSTEM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 192-197
HIGH-PRESSURE PHASES PRODUCED BY LOW-ENERGY ION-IMPLANTATION WITH REFERENCE TO CUBIC BORON-NITRIDE
Authors: MCKENZIE DR MCFALL WD SMITH H HIGGINS B BOSWELL RW DURANDET A JAMES BW FALCONER IS
Citation: Dr. Mckenzie et al., HIGH-PRESSURE PHASES PRODUCED BY LOW-ENERGY ION-IMPLANTATION WITH REFERENCE TO CUBIC BORON-NITRIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 90-95
NEW PLASMA-ASSISTED DEPOSITION TECHNIQUE USING HELICON ACTIVATED REACTIVE EVAPORATION
Authors: DURANDET A BOSWELL R MCKENZIE D
Citation: A. Durandet et al., NEW PLASMA-ASSISTED DEPOSITION TECHNIQUE USING HELICON ACTIVATED REACTIVE EVAPORATION, Review of scientific instruments, 66(4), 1995, pp. 2908-2913
DEPOSITION OF SILICON DIOXIDE FILMS USING THE HELICON DIFFUSION REACTOR FOR INTEGRATED-OPTICS APPLICATIONS
Authors: GIROULTMATLAKOWSKI G CHARLES C DURANDET A BOSWELL RW ARMAND S PERSING HM PERRY AJ LLOYD PD HYDE SR BOGSANYI D
Citation: G. Giroultmatlakowski et al., DEPOSITION OF SILICON DIOXIDE FILMS USING THE HELICON DIFFUSION REACTOR FOR INTEGRATED-OPTICS APPLICATIONS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(5), 1994, pp. 2754-2761
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