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Results: 1-7 |
Results: 7
ELLIPSOMETRY AS A POWERFUL TOOL FOR THE CONTROL OF EPITAXIAL SEMICONDUCTOR STRUCTURES IN-SITU AND EX-SITU
Authors: SVITASHEV KK SHVETS VA MARDEZHOV AS DVORETSKY SA SIDOROV YG MIKHAILOV NN SPESIVTSEV EV RYCHLITSKY SV
Citation: Kk. Svitashev et al., ELLIPSOMETRY AS A POWERFUL TOOL FOR THE CONTROL OF EPITAXIAL SEMICONDUCTOR STRUCTURES IN-SITU AND EX-SITU, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 164-167
LOCAL EXPRESS SCANNING CHARACTERIZATION OF CRYSTAL PARAMETERS OF A SEMICONDUCTOR SURFACE AND BULK SIMULTANEOUSLY BY MEANS OF 2ND-HARMONIC GENERATION
Authors: BALANYUK VV DVORETSKY SA FEDOROV AA LIBERMAN VI MUSHER SL RUBENCHIK AM RYABCHENKO VE STUPAK MF SYSKIN VS
Citation: Vv. Balanyuk et al., LOCAL EXPRESS SCANNING CHARACTERIZATION OF CRYSTAL PARAMETERS OF A SEMICONDUCTOR SURFACE AND BULK SIMULTANEOUSLY BY MEANS OF 2ND-HARMONIC GENERATION, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 168-172
PECULIARITIES OF THE MBE GROWTH PHYSICS AND TECHNOLOGY OF NARROW-GAP II-VI COMPOUNDS
Authors: SIDOROV YG DVORETSKY SA YAKUSHEV MV MIKHAILOV NN VARAVIN VS LIBERMAN VI
Citation: Yg. Sidorov et al., PECULIARITIES OF THE MBE GROWTH PHYSICS AND TECHNOLOGY OF NARROW-GAP II-VI COMPOUNDS, Thin solid films, 306(2), 1997, pp. 253-265
PLANAR PHOTODIODES BASED ON P-HGCDTE (X=0.22) EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: OVSYUK VN REMESNIK VG STUDENIKIN SA SUSLYAKOV AO TALIPOV NK VASILEV VV ZAHARYASH TI SIDOROV YG DVORETSKY SA MIKHAYLOV NN LIBERMAN VG VARAVIN VS
Citation: Vn. Ovsyuk et al., PLANAR PHOTODIODES BASED ON P-HGCDTE (X=0.22) EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Infrared physics & technology, 37(3), 1996, pp. 321-323
MOLECULAR-BEAM EPITAXY OF HIGH-QUALITY HG1-XCDXTE FILMS WITH CONTROL OF THE COMPOSITION DISTRIBUTION
Authors: VARAVIN VS DVORETSKY SA LIBERMAN VI MIKHAILOV NN SIDOROV YG
Citation: Vs. Varavin et al., MOLECULAR-BEAM EPITAXY OF HIGH-QUALITY HG1-XCDXTE FILMS WITH CONTROL OF THE COMPOSITION DISTRIBUTION, Journal of crystal growth, 159(1-4), 1996, pp. 1161-1166
THE CONTROLLED GROWTH OF HIGH-QUALITY MERCURY CADMIUM TELLURIDE
Authors: VARAVIN VS DVORETSKY SA LIBERMAN VI MIKHAILOV NN SIDOROV YG
Citation: Vs. Varavin et al., THE CONTROLLED GROWTH OF HIGH-QUALITY MERCURY CADMIUM TELLURIDE, Thin solid films, 267(1-2), 1995, pp. 121-125
THE GROWTH OF HIGH-QUALITY MCT FILMS BY MBE USING IN-SITU ELLIPSOMETRY
Authors: SVITASHEV KK DVORETSKY SA SIDOROV YG SHVETS VA MARDEZHOV AS NIS IE VARAVIN VS LIBERMAN V REMESNIK VG
Citation: Kk. Svitashev et al., THE GROWTH OF HIGH-QUALITY MCT FILMS BY MBE USING IN-SITU ELLIPSOMETRY, Crystal research and technology, 29(7), 1994, pp. 931-937
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