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Results: 1-7 |
Results: 7
Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE
Authors: Johnson, JW Baca, AG Briggs, RD Shul, RJ Wendt, JR Monier, C Ren, F Pearton, SJ Dabiran, AM Wowchack, AM Polley, CJ Chow, PP
Citation: Jw. Johnson et al., Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE, SOL ST ELEC, 45(12), 2001, pp. 1979-1985
dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors
Authors: Luo, B Johnson, JW Ren, F Allums, KK Abernathy, CR Pearton, SJ Dwivedi, R Fogarty, TN Wilkins, R Dabiran, AM Wowchack, AM Polley, CJ Chow, PP Baca, AG
Citation: B. Luo et al., dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors, APPL PHYS L, 79(14), 2001, pp. 2196-2198
Hexagonal growth spirals on GaN grown by molecular-beam epitaxy: Kinetics versus thermodynamics
Authors: Parkhomovsky, A Dabiran, AM Benjaminsson, B Cohen, PI
Citation: A. Parkhomovsky et al., Hexagonal growth spirals on GaN grown by molecular-beam epitaxy: Kinetics versus thermodynamics, APPL PHYS L, 78(16), 2001, pp. 2315-2317
A rate equation model for the growth of GaN on GaN(000(1)over-bar) by molecular beam epitaxy
Authors: Held, R Ishaug, BE Parkhomovsky, A Dabiran, AM Cohen, PI
Citation: R. Held et al., A rate equation model for the growth of GaN on GaN(000(1)over-bar) by molecular beam epitaxy, J APPL PHYS, 87(3), 2000, pp. 1219-1226
Growth of Hf and HfN on GaN by molecular beam epitaxy
Authors: Parkhomovsky, A Ishaug, BE Dabiran, AM Cohen, PI
Citation: A. Parkhomovsky et al., Growth of Hf and HfN on GaN by molecular beam epitaxy, J VAC SCI A, 17(4), 1999, pp. 2162-2165
Step edge barriers versus step edge relaxation in GaAs : Sn molecular beamepitaxy
Authors: Dabiran, AM Seutter, SM Stoyanov, S Bartelt, MC Evans, JW Cohen, PI
Citation: Am. Dabiran et al., Step edge barriers versus step edge relaxation in GaAs : Sn molecular beamepitaxy, SURF SCI, 438(1-3), 1999, pp. 131-141
Structure and composition of GaN(0001) A and B surfaces
Authors: Held, R Nowak, G Ishaug, BE Seutter, SM Parkhomovsky, A Dabiran, AM Cohen, PI Grzegory, I Porowski, S
Citation: R. Held et al., Structure and composition of GaN(0001) A and B surfaces, J APPL PHYS, 85(11), 1999, pp. 7697-7704
Risultati: 1-7 |