Citation: J. Bandet et al., Raman analysis of wurtzite silicon islands in silicon oxide deposited in N2O-SiH4 plasma process, JPN J A P 2, 39(2B), 2000, pp. L141-L142
Authors:
Radouane, K
Date, L
Yousfi, M
Despax, B
Caquineau, H
Citation: K. Radouane et al., RF discharge modelling in a N2O/SiH4 mixture for SiO2 deposition and comparison with experiment, J PHYS D, 33(11), 2000, pp. 1332-1341