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Results: 1-25 | 26-50 | 51-68 |
Results: 51-68/68

Authors: King, SW Carlson, EP Therrien, RJ Christman, JA Nemanich, RJ Davis, RF
Citation: Sw. King et al., X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms, J APPL PHYS, 86(10), 1999, pp. 5584-5593

Authors: Bergman, L Dutta, M Balkas, C Davis, RF Christman, JA Alexson, D Nemanich, RJ
Citation: L. Bergman et al., Raman analysis of the E1 and A1 quasi-longitudinal optical and quasi-transverse optical modes in wurtzite AlN, J APPL PHYS, 85(7), 1999, pp. 3535-3539

Authors: Bidnyk, S Little, BD Schmidt, TJ Cho, YH Krasinski, J Song, JJ Goldenberg, B Yang, W Perry, WG Bremser, MD Davis, RF
Citation: S. Bidnyk et al., Stimulated emission in GaN thin films in the temperature range of 300-700 K, J APPL PHYS, 85(3), 1999, pp. 1792-1795

Authors: Roberson, SL Finello, D Davis, RF
Citation: Sl. Roberson et al., Electrochemical evaluation of molybdenum nitride electrodes in H2SO4 electrolyte, J APPL ELEC, 29(1), 1999, pp. 75-80

Authors: King, SW Kern, RS Benjamin, MC Barnak, JP Nemanich, RJ Davis, RF
Citation: Sw. King et al., Chemical vapor cleaning of 6H-SiC surfaces, J ELCHEM SO, 146(9), 1999, pp. 3448-3454

Authors: King, SW Nemanich, RJ Davis, RF
Citation: Sw. King et al., Dry ex situ cleaning processes for (0001)(Si) 6H-SiC surfaces, J ELCHEM SO, 146(7), 1999, pp. 2648-2651

Authors: King, SW Nemanich, RJ Davis, RF
Citation: Sw. King et al., Wet chemical processing of (0001)(Si) 6H-SiC hydrophobic and hydrophilic surfaces, J ELCHEM SO, 146(5), 1999, pp. 1910-1917

Authors: Pavlovska, A Torres, VM Bauer, E Doak, RB Tsong, IST Thomson, DB Davis, RF
Citation: A. Pavlovska et al., Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source, APPL PHYS L, 75(7), 1999, pp. 989-991

Authors: Skierbiszewski, C Suski, T Leszczynski, M Shin, M Skowronski, M Bremser, MD Davis, RF
Citation: C. Skierbiszewski et al., Evidence for localized Si-donor state and its DX-like properties in AlGaN (vol 74, pg 3833, 1999), APPL PHYS L, 75(20), 1999, pp. 3225A-3225A

Authors: Skierbiszewski, C Suski, T Leszczynski, M Shin, M Skowronski, M Bremser, MD Davis, RF
Citation: C. Skierbiszewski et al., Evidence for localized Si-donor state and its metastable properties in AlGaN, APPL PHYS L, 74(25), 1999, pp. 3833-3835

Authors: Zheleva, TS Ashmawi, WM Nam, OH Davis, RF
Citation: Ts. Zheleva et al., Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures, APPL PHYS L, 74(17), 1999, pp. 2492-2494

Authors: Bartlett, JS Ciotti, AM Davis, RF Cullen, JJ
Citation: Js. Bartlett et al., The spectral effects of clouds on solar irradiance, J GEO RES-O, 103(C13), 1998, pp. 31017-31031

Authors: Kaminska, E Piotrowska, A Jasinski, J Kozubowski, J Barcz, A Golaszewska, K Bremser, MD Davis, RF
Citation: E. Kaminska et al., Interfacial microstructure of Ni/Si-based ohmic contacts to GaN (vol 94, pg 383, 1998), ACT PHY P A, 94(5-6), 1998, pp. 857-857

Authors: Ade, H Yang, W English, SL Hartman, J Davis, RF Nemanich, RJ Litvinenko, VN Pinayev, IV Wu, Y Madey, JMJ
Citation: H. Ade et al., A free electron laser-photoemission electron microscope system (FEL-PEEM), SURF REV L, 5(6), 1998, pp. 1257-1268

Authors: Jarrendahl, K Davis, RF
Citation: K. Jarrendahl et Rf. Davis, Materials properties and characterization of SiC, SEM SEMIMET, 52, 1998, pp. 1-20

Authors: Ronning, C Banks, AD McCarson, BL Schlesser, R Sitar, Z Davis, RF Ward, BL Nemanich, RJ
Citation: C. Ronning et al., Structural and electronic properties of boron nitride thin films containing silicon, J APPL PHYS, 84(9), 1998, pp. 5046-5051

Authors: Ward, BL Nam, OH Hartman, JD English, SL McCarson, BL Schlesser, R Sitar, Z Davis, RF Nemanich, RJ
Citation: Bl. Ward et al., Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy, J APPL PHYS, 84(9), 1998, pp. 5238-5242

Authors: King, SW Barnak, JP Bremser, MD Tracy, KM Ronning, C Davis, RF Nemanich, RJ
Citation: Sw. King et al., Cleaning of AlN and GaN surfaces, J APPL PHYS, 84(9), 1998, pp. 5248-5260
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