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Results:
1-7
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Results: 7
Authors:
Kamminga, JD
Delhez, R
Citation: Jd. Kamminga et R. Delhez, Measurement of dislocation distributions by means of X ray diffraction, MAT SCI E A, 309, 2001, pp. 55-59
Authors:
Bor, TC
Cleveringa, HHM
Delhez, R
Van der Giessen, E
Citation: Tc. Bor et al., Simulation of X-ray diffraction-line broadening due to dislocations in a model composite material, MAT SCI E A, 309, 2001, pp. 505-509
Authors:
Kamminga, JD
de Keijser, TH
Delhez, R
Mittemeijer, EJ
Citation: Jd. Kamminga et al., On the origin of stress in magnetron sputtered TiN layers, J APPL PHYS, 88(11), 2000, pp. 6332-6345
Authors:
Kamminga, JD
de Keijser, TH
Mittemeijer, EJ
Delhez, R
Citation: Jd. Kamminga et al., New methods for diffraction stress measurement: a critical evaluation of new and existing methods, J APPL CRYS, 33, 2000, pp. 1059-1066
Authors:
Kamminga, JD
Delhez, R
Citation: Jd. Kamminga et R. Delhez, Calculation of diffraction line profiles from specimens with dislocations.A comparison of analytical models with computer simulations, J APPL CRYS, 33, 2000, pp. 1122-1127
Authors:
Velterop, L
Delhez, R
de Keijser, TH
Mittemeijer, EJ
Reefman, D
Citation: L. Velterop et al., X-ray diffraction analysis of stacking and twin faults in f.c.c. metals: arevision and allowance for texture and non-uniform fault probabilities, J APPL CRYS, 33, 2000, pp. 296-306
Authors:
Kamminga, JD
Delhez, R
de Keijser, TH
Mittemeijer, EJ
Citation: Jd. Kamminga et al., A tool for X-ray diffraction analysis of thin layers on substrates: substrate peak removal method, J APPL CRYS, 33, 2000, pp. 108-111
Risultati:
1-7
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