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Citation: Bc. Deng et al., Study on (root 3 x root 3)R30 degrees reconstruction of 6H-SiC(0001) surface by Atleed, ACT PHY C E, 50(1), 2001, pp. 106-110

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Citation: Wh. Chen et al., The atomic structure of Si(111)-(root 3 x root 3)R30 degrees-Ga determinedby automated tensor LEED, SURF REV L, 7(3), 2000, pp. 267-270

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Citation: Bc. Deng et al., Multilayer structural determination of the GaAs((1)over-bar(1)over-bar(1)over-bar)2x2 reconstruction by automated tensor LEED, PHYS REV B, 59(15), 1999, pp. 9775-9778