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Results:
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Results: 13
Authors:
Fay, JL
Beluch, J
Despax, B
Sarrabayrouse, G
Citation: Jl. Fay et al., Positive charge increase in plasma deposited oxides induced by low pressure chemical vapor deposition of silicon nitride, JPN J A P 1, 40(1), 2001, pp. 7-11
Authors:
Preda, L
Courselle, L
Despax, B
Bandet, J
Ianculescu, A
Citation: L. Preda et al., Structural characteristics of RF-sputtered BaTiO3 thin films, THIN SOL FI, 389(1-2), 2001, pp. 43-50
Authors:
Fay, JL
Beluch, J
Despax, B
Sarrabayrouse, G
Citation: Jl. Fay et al., Feasibility of an isolation by local oxidation of silicon without field implant, SOL ST ELEC, 45(8), 2001, pp. 1257-1263
Authors:
Radouane, K
Despax, B
Yousfi, M
Couderc, JP
Klusmann, E
Meyer, H
Schulz, R
Schulze, J
Citation: K. Radouane et al., Two-dimensional electrical modeling of asymmetric radio-frequency discharges for geometry effect analysis. Comparison with experiments, J APPL PHYS, 90(9), 2001, pp. 4346-4354
Authors:
Bandet, J
Despax, B
Caumont, M
Date, L
Citation: J. Bandet et al., Raman analysis of wurtzite silicon islands in silicon oxide deposited in N2O-SiH4 plasma process, JPN J A P 2, 39(2B), 2000, pp. L141-L142
Authors:
Hallil, A
Despax, B
Citation: A. Hallil et B. Despax, Internal r.f. plasma parameters correlated with structure and properties of deposited hydrocarbon films, THIN SOL FI, 358(1-2), 2000, pp. 30-39
Authors:
Fay, JL
Beluch, J
Despax, B
Bafleur, M
Sarrabayrouse, G
Citation: Jl. Fay et al., Reduction of the parasitic charge generation during silicon nitride deposition in a LOCOS isolation without field implant, MICROEL REL, 40(4-5), 2000, pp. 593-596
Authors:
Radouane, K
Date, L
Yousfi, M
Despax, B
Caquineau, H
Citation: K. Radouane et al., RF discharge modelling in a N2O/SiH4 mixture for SiO2 deposition and comparison with experiment, J PHYS D, 33(11), 2000, pp. 1332-1341
Authors:
Fay, JL
Beluch, J
Allirand, L
Brosset, D
Despax, B
Bafleur, M
Sarrabayrouse, G
Citation: Jl. Fay et al., Comprehensive analysis of an isolation area obtained by local oxidation ofsilicon without field implant, JPN J A P 1, 38(9A), 1999, pp. 5012-5017
Authors:
Guyard, C
Despax, B
Citation: C. Guyard et B. Despax, Laser writing on gold-containing hydrocarbon matrix films deposited by a technique combining cathodic sputtering with hydrocarbon plasma polymerization, SURF COAT, 119, 1999, pp. 638-642
Authors:
Date, L
Radouane, K
Caquineau, H
Despax, B
Couderc, JP
Yousfi, M
Citation: L. Date et al., Analysis of the N2O dissociation by r.f. discharges in a plasma reactor, SURF COAT, 119, 1999, pp. 1042-1048
Authors:
Date, L
Radouane, K
Despax, B
Yousfi, M
Caquineau, H
Hennad, A
Citation: L. Date et al., Analysis of the N2O dissociation in a RF discharge reactor, J PHYS D, 32(13), 1999, pp. 1478-1488
Authors:
Bandet, J
Despax, B
Caumont, M
Citation: J. Bandet et al., Nitrogen bonding environments and local order in hydrogenated amorphous silicon nitride films studied by Raman spectroscopy, J APPL PHYS, 85(11), 1999, pp. 7899-7904
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