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Results:
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Results: 25
Authors:
Vedula, R
Desu, CS
Tirumala, S
Bhatt, HD
Desu, SB
Lee, KB
Citation: R. Vedula et al., New electrode-barrier structures for high density ferroelectric memories, APPL PHYS A, 72(1), 2001, pp. 13-20
Authors:
Desu, SB
Vedula, R
Bhatt, HD
Hwang, YS
Zhang, X
Citation: Sb. Desu et al., Novel electrode barriers for high density ferroelectric nonvolatile memories, PHYS ST S-A, 184(2), 2001, pp. 273-289
Authors:
Tirumala, S
Rastogi, AC
Desu, SB
Citation: S. Tirumala et al., Effect of oxygen plasma on growth, structure and ferroelectric properties of SrBi2Ta2O9 thin films formed by pulsed laser ablation technique, J ELECTROCE, 5(1), 2000, pp. 7-20
Authors:
Ching-Prado, E
Perez, W
Dobal, PS
Katiyar, RS
Tirumala, S
Desu, SB
Citation: E. Ching-prado et al., Raman scattering in the aurivillius-layered ferroelectric SrBi2Ta2O9-Bi3TiNbO9 thin films, INTEGR FERR, 29(1-2), 2000, pp. A33-A41
Authors:
Auciello, O
Van Keuls, F
Bhalla, A
Desu, SB
Horwitz, J
Payne, DA
Ramesh, R
Citation: O. Auciello et al., Round table discussion, FWPR'99: Future trends in ferroelectric research and technology, INTEGR FERR, 29(1-2), 2000, pp. A161-A163
Authors:
Desu, SB
Vendik, OG
Citation: Sb. Desu et Og. Vendik, Supression of size effects in ferroelectric films, INTEGR FERR, 29(1-2), 2000, pp. 175-192
Authors:
Senkevich, JJ
Desu, SB
Citation: Jj. Senkevich et Sb. Desu, Compositional studies of near-room-temperature thermal CVD poly(chloro-p-xylylene)/SiO2 nanocomposites, APPL PHYS A, 70(5), 2000, pp. 541-546
Authors:
Tirumala, S
Desu, SB
Rastogi, A
Citation: S. Tirumala et al., Role of bismuth precursor in crystallization of SrBi2Ta2O9 thin films, APPL PHYS A, 70(3), 2000, pp. 253-259
Authors:
Moret, MP
Zallen, R
Vijay, DP
Desu, SB
Citation: Mp. Moret et al., Brookite-rich titania films made by pulsed laser deposition, THIN SOL FI, 366(1-2), 2000, pp. 8-10
Authors:
Senkevich, JJ
Desu, SB
Simkovic, V
Citation: Jj. Senkevich et al., Temperature studies of optical birefringence and X-ray diffraction with poly(p-xylylene), poly(chloro-p-xylylene) and poly(tetrafluoro-p-xylylene) CVD thin films, POLYMER, 41(7), 2000, pp. 2379-2390
Authors:
Desu, CS
Joshi, PC
Desu, SB
Citation: Cs. Desu et al., Enhanced dielectric properties of modified Ta2O5 thin films, MAT RES INN, 2(5), 1999, pp. 299-302
Authors:
Senkevich, JJ
Desu, SB
Citation: Jj. Senkevich et Sb. Desu, Near-room-temperature thermal chemical vapor deposition of poly(chloro-p-xylylene)/SiO2 nanocomposites, CHEM MATER, 11(7), 1999, pp. 1814-1821
Authors:
Foschini, CR
Joshi, PC
Varela, JA
Desu, SB
Citation: Cr. Foschini et al., Properties of BaBi2Ta2O9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications, J MATER RES, 14(5), 1999, pp. 1860-1864
Authors:
Ching-Prado, E
Perez, W
Reynes-Figueroa, A
Katiyar, RS
Desu, SB
Citation: E. Ching-prado et al., A low frequency Raman study of SrBi2Ta2O9-Bi3TiNbO9, FERROELEC L, 25(1-2), 1999, pp. 53-57
Authors:
Desu, SB
Vijay, DP
Ramanathan, S
Bhatt, HD
Tirumala, S
Citation: Sb. Desu et al., Stresses in sputtered RUOx thin films, THIN SOL FI, 350(1-2), 1999, pp. 21-29
Authors:
Bhatt, HD
Vedula, R
Desu, SB
Fralick, GC
Citation: Hd. Bhatt et al., La(1-x)SrxCoO3 for thin film thermocouple applications, THIN SOL FI, 350(1-2), 1999, pp. 249-257
Authors:
Bhatt, HD
Vedula, R
Desu, SB
Fralick, GC
Citation: Hd. Bhatt et al., Thin film TiC/TaC thermocouples, THIN SOL FI, 342(1-2), 1999, pp. 214-220
Authors:
Ryu, SO
Tirumala, S
Joshi, PC
Desu, SB
Citation: So. Ryu et al., Fabrication and characterization of (1-x)SrBi2Ta2O9-xBi(3)TaTiO(9) layeredstructure solid solution thin films for ferroelectric random access memory(FRAM) applications, THIN SOL FI, 340(1-2), 1999, pp. 53-61
Authors:
Senkevich, JJ
Desu, SB
Citation: Jj. Senkevich et Sb. Desu, Morphology of poly(chloro-p-xylylene) CVD thin films, POLYMER, 40(21), 1999, pp. 5751-5759
Authors:
Lee, JK
Park, Y
Chung, I
Oh, SJ
Jung, DJ
Song, YJ
Koo, BJ
Lee, SY
Kim, K
Desu, SB
Citation: Jk. Lee et al., Improvement in the electrical properties in Pt/Pb(Zr0.52Ti0.48)O-3/Pt ferroelectric capacitors using a wet cleaning method, J APPL PHYS, 86(11), 1999, pp. 6376-6381
Authors:
Foschini, CR
Longo, E
Varela, JA
Desu, SB
Citation: Cr. Foschini et al., Thickness dependence of leakage current in BaBi2Ta2O9 thin films, APPL PHYS L, 75(4), 1999, pp. 552-554
Authors:
Lee, JK
Kim, TY
Chung, I
Desu, SB
Citation: Jk. Lee et al., Characterization and elimination of dry etching damaged layer in Pt/Pb(Zr0.53Ti0.47)O-3/Pt ferroelectric capacitor, APPL PHYS L, 75(3), 1999, pp. 334-336
Authors:
Ryu, SO
Joshi, PC
Desu, SB
Citation: So. Ryu et al., Low temperature processed 0.7SrBi(2)Ta(2)O(9)-0.3Bi(3)TaTiO(9) thin films fabricated on multilayer electrode-barrier structure for high-density ferroelectric memories, APPL PHYS L, 75(14), 1999, pp. 2126-2128
Authors:
Rastogi, AC
Tirumala, S
Desu, SB
Citation: Ac. Rastogi et al., Plasma-assisted pulsed laser deposition of SrBi2Ta2O9 thin films of improved ferroelectric and crystalline properties, APPL PHYS L, 74(23), 1999, pp. 3492-3494
Authors:
Lee, KB
Tirumala, S
Desu, SB
Citation: Kb. Lee et al., Highly c-axis oriented Pb(Zr,Ti)O-3 thin films grown on Ir electrode barrier and their electrical properties, APPL PHYS L, 74(10), 1999, pp. 1484-1486
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