Authors: Desvoivres, L Vallier, L Joubert, O

Citation: L. Desvoivres et al., X-ray photoelectron spectroscopy investigation of sidewall passivation films formed during gate etch processes, J VAC SCI B, 19(2), 2001, pp. 420-426

Authors: Desvoivres, L Vallier, L Joubert, O

Citation: L. Desvoivres et al., Sub-0.1 mu m gate etch processes: Towards some limitations of the plasma technology?, J VAC SCI B, 18(1), 2000, pp. 156-165

Authors: Desvoivres, L Bonvalot, M Vallier, L Joubert, O

Citation: L. Desvoivres et al., Study of thin gate of oxide etching during plasma patterning of 0.1 mu m Si gates, MICROEL ENG, 46(1-4), 1999, pp. 295-298

Authors: Vallier, L Desvoivres, L Bonvalot, M Joubert, O

Citation: L. Vallier et al., Thin gate oxide behavior during plasma patterning of silicon gates, APPL PHYS L, 75(8), 1999, pp. 1069-1070