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Results:
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Results: 2
Elevated source drain devices using silicon selective epitaxial growth
Authors:
Samavedam, SB Dip, A Phillips, AM Tobin, PJ Mihopolous, T Taylor, WJ Adetutu, O
Citation:
Sb. Samavedam et al., Elevated source drain devices using silicon selective epitaxial growth, J VAC SCI B, 18(3), 2000, pp. 1244-1250
Relaxation of strained Si layers grown on SiGe buffers
Authors:
Samavedam, SB Taylor, WJ Grant, JM Smith, JA Tobin, PJ Dip, A Phillips, AM Liu, R
Citation:
Sb. Samavedam et al., Relaxation of strained Si layers grown on SiGe buffers, J VAC SCI B, 17(4), 1999, pp. 1424-1429
Risultati:
1-2
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