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Citation: Gh. Olsen et al., Photodetector arrays from 100 mm diameter InGaAs/InP epitaxial wafers, J CRYST GR, 222(4), 2001, pp. 693-696

Authors: Dries, JC Thomson, KJ Forrest, SR

Citation: Jc. Dries et al., In0.53Ga0.47As/In0.52Al0.48As separate absorption, charge, and multiplication layer long wavelength avalanche photodiode, ELECTR LETT, 35(4), 1999, pp. 334-335

Authors: Dries, JC Gokhale, MR Forrest, SR

Citation: Jc. Dries et al., A 2.0 mu m cutoff wavelength separate absorption, charge, and multiplication layer avalanche photodiode using strain-compensated InGaAs quantum wells, APPL PHYS L, 74(18), 1999, pp. 2581-2583