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Results:
1-7
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Results: 7
Authors:
Re, M
Scalese, S
Mirabella, S
Terrasi, A
Priolo, F
Rimini, E
Berti, M
Coati, A
Drigo, A
Carnera, A
De Salvador, D
Spinella, C
La Mantia, A
Citation: M. Re et al., Structural characterisation and stability of Si1-xGex/Si(100) heterostructures grown by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 749-755
Authors:
Romanato, F
Natali, M
Napolitani, E
Drigo, A
Citation: F. Romanato et al., Computation of the strain field generated by dislocations with a position-dependent Burgers' vector distribution, MICRON, 31(3), 2000, pp. 277-283
Authors:
De Salvador, D
Petrovich, M
Berti, M
Romanato, F
Napolitani, E
Drigo, A
Stangl, J
Zerlauth, S
Muhlberger, M
Schaffler, F
Bauer, G
Kelires, PC
Citation: D. De Salvador et al., Lattice parameter of Si1-x-yGexCy alloys, PHYS REV B, 61(19), 2000, pp. 13005-13013
Authors:
DeVittorio, M
Coli, G
Rinaldi, R
Gigli, G
Cingolani, R
De Salvador, D
Berti, M
Drigo, A
Fucilli, F
Ligonzo, T
Augelli, V
Rizzi, A
Lantier, R
Freundt, D
Luth, H
Neubauer, B
Gerthsen, D
Citation: M. Devittorio et al., Photocurrent spectroscopy of GaN and AlGaN epilayers grown on 6H (0001) silicon carbide, SOL ST ELEC, 44(3), 2000, pp. 465-470
Authors:
Boscherini, F
Pascarelli, S
Lamberti, C
Mobilio, S
Romanato, F
DeSalvador, D
Tormen, M
Natali, M
Drigo, A
Citation: F. Boscherini et al., Local structure in semiconductor superlattices and epilayers, J SYNCHROTR, 6, 1999, pp. 506-508
Authors:
Tormen, M
De Salvador, D
Natali, M
Drigo, A
Romanato, F
Rossetto, G
Boscherini, F
Mobilio, S
Citation: M. Tormen et al., Bond length variation in In0.25Ga0.75As/InP epitaxial layers thicker than the critical thickness, J APPL PHYS, 86(5), 1999, pp. 2533-2539
Authors:
Romanato, F
De Salvador, D
Berti, M
Drigo, A
Natali, M
Tormen, M
Rossetto, G
Pascarelli, S
Boscherini, F
Lamberti, C
Mobilio, S
Citation: F. Romanato et al., Bond-length variation in InxGa1-xAs/InP strained epitaxial layers (vol 57,pg 14 619, 1998), PHYS REV B, 58(19), 1998, pp. 13277-13277
Risultati:
1-7
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