Authors:
Dubecky, F
Darmo, J
Krempasky, M
Sekacova, M
Zat'ko, B
Necas, V
Pelfer, PG
Senderak, R
Somora, M
Haralabidis, N
Loukas, D
Misiakos, K
Hlavac, S
Kolesar, F
Bohacek, P
Rucek, M
Citation: F. Dubecky et al., On technology and performance of SAMO: X- and gamma-ray 32-pixel line detector based on semi-insulating GaAs and InP, NUCL INST A, 458(1-2), 2001, pp. 152-157
Authors:
Necas, V
Anh, TL
Sekacova, K
Darmo, J
Dubecky, F
Perd'ochova, A
Citation: V. Necas et al., Investigation of performance of semi-insulating GaAs detectors irradiated by high gamma doses, NUCL INST A, 458(1-2), 2001, pp. 348-351
Authors:
Pelfer, PG
Dubecky, F
Fornari, R
Pikna, M
Gombia, E
Darmo, J
Krempasky, M
Sekacova, M
Citation: Pg. Pelfer et al., Present status and perspectives of the radiation detectors based on InP materials, NUCL INST A, 458(1-2), 2001, pp. 400-405
Authors:
Darmo, J
Dubecky, F
Zat'ko, B
Necas, V
Pelfer, PG
Citation: J. Darmo et al., An exploration of the semi-insulating GaAs-based particle detector at temperatures below 300 K, NUCL INST A, 458(1-2), 2001, pp. 437-440
Authors:
Ivanco, J
Dubecky, F
Darmo, J
Krempasky, M
Besse, I
Senderak, R
Citation: J. Ivanco et al., Semi-insulating GaAs-based Schottky contacts in the role of detectors of ionising radiation: An effect of the interface treatment, NUCL INST A, 434(1), 1999, pp. 158-163