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Results: 1-12 |
Results: 12
Photoconductance measurements and Stokes shift in InGaN alloys
Authors: Reverchon, JL Huet, F Poisson, MA Duboz, JY Damilano, B Grandjean, N Massies, J
Citation: Jl. Reverchon et al., Photoconductance measurements and Stokes shift in InGaN alloys, MAT SCI E B, 82(1-3), 2001, pp. 197-199
Optoelectronic characterization of blue InGaN/GaN LEDS grown by MBE
Authors: Dalmasso, S Damilano, B Grandjean, N Massies, J Leroux, M Reverchon, JL Duboz, JY
Citation: S. Dalmasso et al., Optoelectronic characterization of blue InGaN/GaN LEDS grown by MBE, MAT SCI E B, 82(1-3), 2001, pp. 256-258
Recombination mechanisms in AlGaN and their effects on the response of ultraviolet detectors
Authors: Reverchon, JL Poisson, MA Duboz, JY
Citation: Jl. Reverchon et al., Recombination mechanisms in AlGaN and their effects on the response of ultraviolet detectors, SEMIC SCI T, 16(8), 2001, pp. 720-723
Dielectric microcavity in GaN/Si
Authors: Duboz, JY Dua, L Glastre, G Legagneux, P Massies, J Semond, F Grandjean, N
Citation: Jy. Duboz et al., Dielectric microcavity in GaN/Si, PHYS ST S-A, 183(1), 2001, pp. 35-39
GaN as seen by the industry
Authors: Duboz, JY
Citation: Jy. Duboz, GaN as seen by the industry, CR AC S IV, 1(1), 2000, pp. 71-80
MBE grown InGaN quantum dots and quantum wells: effects of in-plane localization
Authors: Dalmasso, S Damilano, B Grandjean, N Massies, J Leroux, M Reverchon, JL Duboz, JY
Citation: S. Dalmasso et al., MBE grown InGaN quantum dots and quantum wells: effects of in-plane localization, THIN SOL FI, 380(1-2), 2000, pp. 195-197
Improved radiative efficiency using self-formed GaInN/GaN quantum dots grown by molecular beam epitaxy
Authors: Damilano, B Grandjean, N Massies, J Dalmasso, S Reverchon, JL Calligaro, M Duboz, JY Siozade, L Leymarie, J
Citation: B. Damilano et al., Improved radiative efficiency using self-formed GaInN/GaN quantum dots grown by molecular beam epitaxy, PHYS ST S-A, 180(1), 2000, pp. 363-368
Photoconductance measurements on thin InGaN layers
Authors: Reverchon, JL Huet, F Poisson, MA Duboz, JY
Citation: Jl. Reverchon et al., Photoconductance measurements on thin InGaN layers, J APPL PHYS, 88(9), 2000, pp. 5138-5141
Carrier capture in InGaN quantum wells and hot carrier effects in GaN
Authors: Binet, F Duboz, JY Grattepain, C Scholz, F Off, J
Citation: F. Binet et al., Carrier capture in InGaN quantum wells and hot carrier effects in GaN, MAT SCI E B, 59(1-3), 1999, pp. 323-329
European Materials Research Society 1998 Spring Meeting, Symposium L: Nitrides and related wide band gap materials, June 16-19, 1998, Strasbourg, France - Preface
Authors: Hangleiter, A Duboz, JY Kishino, K Ponce, F
Citation: A. Hangleiter et al., European Materials Research Society 1998 Spring Meeting, Symposium L: Nitrides and related wide band gap materials, June 16-19, 1998, Strasbourg, France - Preface, MAT SCI E B, 59(1-3), 1999, pp. XI-XI
High-excitation photoluminescence in GaN: Hot-carrier effects and the Motttransition
Authors: Binet, F Duboz, JY Off, J Scholz, F
Citation: F. Binet et al., High-excitation photoluminescence in GaN: Hot-carrier effects and the Motttransition, PHYS REV B, 60(7), 1999, pp. 4715-4722
GaN as seen by the industry
Authors: Duboz, JY
Citation: Jy. Duboz, GaN as seen by the industry, PHYS ST S-A, 176(1), 1999, pp. 5-14
Risultati: 1-12 |