Citation: D. Qian et Dj. Dumin, The field, time and fluence dependencies of trap generation in silicon oxides between 5 and 13.5 nm thick, SEMIC SCI T, 15(8), 2000, pp. 854-861
Authors:
Chen, Y
Singh, R
Rajan, K
Dumin, DJ
DeBoer, S
Thakur, RPS
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