Authors: Kestle, A Wilks, SP Dunstan, PR Pritchard, M Mawby, PA

Citation: A. Kestle et al., Improved Ni/SiC Schottky diode formation, ELECTR LETT, 36(3), 2000, pp. 267-268

Authors: Wilks, SP Williams, RH Pan, M Dunstan, PR Cowie, BCC

Citation: Sp. Wilks et al., Use of ultrathin ZnSe dipole layers for band offset engineering at Ge and Si homo/heterojunctions, J VAC SCI B, 17(4), 1999, pp. 1666-1673

Authors: Pan, M Wilks, SP Dunstan, PR Pritchard, M Williams, RH Cammack, DS Clark, SA

Citation: M. Pan et al., Effect of a ZnSe intralayer on the Si/Ge(111) heterojunction band offsets, THIN SOL FI, 344, 1999, pp. 605-608

Authors: Maffeis, TGG Clark, SA Dunstan, PR Wilks, SP Evans, DA Peiro, F Riechert, H Parbrook, PJ

Citation: Tgg. Maffeis et al., GaN cleaning by Ga deposition, reduction and re-evaporation: An SXPS study, PHYS ST S-A, 176(1), 1999, pp. 751-754

Authors: Dunstan, PR Wilks, SP Teng, KS Pritchard, MA Williams, RH

Citation: Pr. Dunstan et al., The growth and electrical properties of silicon on GaAs(110) studied by scanning tunneling microscopy and scanning tunneling spectroscopy, J APPL PHYS, 86(10), 1999, pp. 5636-5641

Authors: Teng, KS Dunstan, PR Wilks, SP Williams, RH

Citation: Ks. Teng et al., The electronic passivation properties of Si nanoislands on GaAs(110) step defects induced by cleaving, APPL PHYS L, 75(17), 1999, pp. 2590-2592