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Results:
1-8
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Results: 8
Authors:
Auer, U
Prost, W
Agethen, M
Tegude, FJ
Duschl, R
Eberl, K
Citation: U. Auer et al., Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodes, IEEE ELEC D, 22(5), 2001, pp. 215-217
Authors:
Eberl, K
Duschl, R
Schmidt, OG
Denker, U
Haug, R
Citation: K. Eberl et al., Si-based resonant inter- and intraband tunneling diodes, J CRYST GR, 227, 2001, pp. 770-776
Authors:
Duschl, R
Eberl, K
Citation: R. Duschl et K. Eberl, Physics and applications of Si/SiGe/Si resonant interband tunneling diodes, THIN SOL FI, 380(1-2), 2000, pp. 151-153
Authors:
Eberl, K
Schmidt, OG
Duschl, R
Kienzle, O
Ernst, E
Rau, Y
Citation: K. Eberl et al., Self-assembling SiGe and SiGeC nanostructures for light emitters and tunneling diodes, THIN SOL FI, 369(1-2), 2000, pp. 33-38
Epitaxially grown Si/SiGe interband tunneling diodes with high room-temperature peak-to-valley ratio
Authors:
Duschl, R
Schmidt, OG
Eberl, K
Citation: R. Duschl et al., Epitaxially grown Si/SiGe interband tunneling diodes with high room-temperature peak-to-valley ratio, APPL PHYS L, 76(7), 2000, pp. 879-881
Authors:
Duschl, R
Schmidt, OG
Reitemann, G
Kasper, E
Eberl, K
Citation: R. Duschl et al., High room temperature peak-to-valley current ratio in Si based Esaki diodes, ELECTR LETT, 35(13), 1999, pp. 1111-1112
Authors:
Duschl, R
Schmidt, OG
Winter, W
Eberl, K
Dashiell, MW
Kolodzey, J
Jin-Phillipp, NY
Phillipp, F
Citation: R. Duschl et al., Growth and thermal stability of pseudomorphic Ge1-yCy/Ge superlattices on Ge(001), APPL PHYS L, 74(8), 1999, pp. 1150-1152
Authors:
Duschl, R
Seeberger, H
Eberl, K
Citation: R. Duschl et al., Hole mobilities in pseudomorphic Si1-x-yGexCy alloy layers, THIN SOL FI, 336(1-2), 1998, pp. 336-339
Risultati:
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