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Results: 1-10 |
Results: 10
1.54 mu m Light emitting devices based on Er/O-doped Si layered structuresgrown by molecular beam epitaxy
Authors: Ni, WX Du, CX Duteil, F Elfving, A Hansson, GV
Citation: Wx. Ni et al., 1.54 mu m Light emitting devices based on Er/O-doped Si layered structuresgrown by molecular beam epitaxy, OPT MATER, 17(1-2), 2001, pp. 65-69
Er/O doped Si1-xGex alloy layers grown by MBE
Authors: Duteil, F Du, CX Jarrendahl, K Ni, WX Hansson, GV
Citation: F. Duteil et al., Er/O doped Si1-xGex alloy layers grown by MBE, OPT MATER, 17(1-2), 2001, pp. 131-134
Efficient 1.54 mu m light emission from Si/SiGe/Si : Er : O transistors prepared by differential MBE
Authors: Du, CX Duteil, F Hansson, GV Ni, WX
Citation: Cx. Du et al., Efficient 1.54 mu m light emission from Si/SiGe/Si : Er : O transistors prepared by differential MBE, MAT SCI E B, 81(1-3), 2001, pp. 105-108
Origin of abnormal temperature dependence of electroluminescence from Er/O-doped Si diodes
Authors: Hansson, GV Ni, WX Du, CX Elfving, A Duteil, F
Citation: Gv. Hansson et al., Origin of abnormal temperature dependence of electroluminescence from Er/O-doped Si diodes, APPL PHYS L, 78(15), 2001, pp. 2104-2106
Si/SiGe/Si : Er : O light-emitting transistors prepared by differential molecular-beam epitaxy
Authors: Du, CX Duteil, F Hansson, GV Ni, WX
Citation: Cx. Du et al., Si/SiGe/Si : Er : O light-emitting transistors prepared by differential molecular-beam epitaxy, APPL PHYS L, 78(12), 2001, pp. 1697-1699
Luminescence and microstructure of Er/O co-doped Si structures grown by MBE using Er and SiO evaporation
Authors: Duteil, F Du, CX Joelsson, KB Persson, POA Hultman, L Pozina, G Ni, WX Hansson, GV
Citation: F. Duteil et al., Luminescence and microstructure of Er/O co-doped Si structures grown by MBE using Er and SiO evaporation, MAT SC S PR, 3(5-6), 2000, pp. 523-528
Electroluminescence studies of Er and SiO co-doped Si layers prepared by molecular beam epitaxy
Authors: Du, CX Ni, WX Joelsson, KB Duteil, F Hansson, GV
Citation: Cx. Du et al., Electroluminescence studies of Er and SiO co-doped Si layers prepared by molecular beam epitaxy, OPT MATER, 14(3), 2000, pp. 259-265
Light emitting SiGe/i-Si/Si : Er : O tunneling diodes prepared by molecular beam epitaxy
Authors: Ni, WX Du, CX Duteil, F Pozina, G Hansson, GV
Citation: Wx. Ni et al., Light emitting SiGe/i-Si/Si : Er : O tunneling diodes prepared by molecular beam epitaxy, THIN SOL FI, 369(1-2), 2000, pp. 414-418
Device aspects of Er-doped Si structures for optoelectric interconnect applications
Authors: Ni, WX Du, CX Joelsson, KB Pozina, G Duteil, F Hansson, GV
Citation: Wx. Ni et al., Device aspects of Er-doped Si structures for optoelectric interconnect applications, PHYS SCR, T79, 1999, pp. 143-148
Er-doped edge emitting devices with a SiGe waveguide
Authors: Du, CX Ni, WX Joelsson, KB Duteil, F Hansson, GV
Citation: Cx. Du et al., Er-doped edge emitting devices with a SiGe waveguide, J LUMINESC, 80(1-4), 1998, pp. 329-333
Risultati: 1-10 |