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Results: 26-31/31
Authors:
Dvurechenskii, AV
Zinovyev, VA
Markov, VA
Kudryavtsev, VA
Citation: Av. Dvurechenskii et al., Surface reconstruction induced by a pulsed low-energy ion beam during Si(111)molecular beam epitaxy, SURF SCI, 425(2-3), 1999, pp. 185-194
Authors:
Yakimov, AI
Dvurechenskii, AV
Citation: Ai. Yakimov et Av. Dvurechenskii, Anisotropic negative magnetoresistance in one-dimensional channels of porous silicon, JETP LETTER, 69(3), 1999, pp. 202-206
Authors:
Dvurechenskii, AV
Zinov'ev, VA
Markov, VA
Kudryavtsev, VA
Citation: Av. Dvurechenskii et al., Phase transition between 5 x 5 and 7 x 7 reconstructions of the Si(111) surface induced by pulse ion irradiation during Si molecular beam epitaxy, INORG MATER, 35(6), 1999, pp. 536-539
Authors:
Yakimov, AI
Dvurechenskii, AV
Proskuryakov, YY
Nikiforov, AI
Pchelyakov, OP
Teys, SA
Gutakovskii, AK
Citation: Ai. Yakimov et al., Normal-incidence infrared photoconductivity in Si p-i-n diode with embedded Ge self-assembled quantum dots, APPL PHYS L, 75(10), 1999, pp. 1413-1415
Authors:
Dvurechenskii, AV
Zinov'ev, VA
Markov, VA
Citation: Av. Dvurechenskii et al., Mechanism of structural changes of Si(111) surfaces subjected to low-energy ion pulses during molecular-beam epitaxy, J EXP TH PH, 87(6), 1998, pp. 1116-1121
Authors:
Yakimov, AI
Dvurechenskii, AV
Nikiforov, AI
Pchelyakov, OP
Citation: Ai. Yakimov et al., Formation of zero-dimensional hole states in Ge/Si heterostructures probedwith capacitance spectroscopy, THIN SOL FI, 336(1-2), 1998, pp. 332-335