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CRITICAL ISSUES IN ION-IMPLANTATION OF SILICON BELOW 5 KEV - DEFECTS AND DIFFUSION
Authors: AGARWAL A GOSSMANN HJ EAGLESHAM DJ PELAZ L JACOBSON DC POATE JM HAYNES TE
Citation: A. Agarwal et al., CRITICAL ISSUES IN ION-IMPLANTATION OF SILICON BELOW 5 KEV - DEFECTS AND DIFFUSION, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 253(1-2), 1998, pp. 269-274
DAMAGE, DEFECTS AND DIFFUSION FROM ULTRA-LOW ENERGY (0-5 KEV) ION-IMPLANTATION OF SILICON
Authors: AGARWAL A GOSSMANN HJ EAGLESHAM DJ PELAZ L HERNER SB JACOBSON DC HAYNES TE SIMONTON R
Citation: A. Agarwal et al., DAMAGE, DEFECTS AND DIFFUSION FROM ULTRA-LOW ENERGY (0-5 KEV) ION-IMPLANTATION OF SILICON, Solid-state electronics, 42(5), 1998, pp. 17-25
ION MASS INFLUENCE ON TRANSIENT ENHANCED DIFFUSION AND BORON CLUSTERING IN SILICON - DEVIATION FROM THE -MODEL(1)
Authors: HERNER SB GOSSMANN HJ PELAZ LP GILMER GH JARAIZ M JACOBSON DC EAGLESHAM DJ
Citation: Sb. Herner et al., ION MASS INFLUENCE ON TRANSIENT ENHANCED DIFFUSION AND BORON CLUSTERING IN SILICON - DEVIATION FROM THE -MODEL(1), Journal of applied physics, 83(11), 1998, pp. 6182-6184
THE PRECIPITATION OF FE AT THE SI-SIO2 INTERFACE
Authors: WONGLEUNG J EAGLESHAM DJ SAPJETA J JACOBSON DC POATE JM WILLIAMS JS
Citation: J. Wongleung et al., THE PRECIPITATION OF FE AT THE SI-SIO2 INTERFACE, Journal of applied physics, 83(1), 1998, pp. 580-584
DEPTH PROFILING OF VACANCY CLUSTERS IN MEV-IMPLANTED SI USING AU LABELING
Authors: VENEZIA VC EAGLESHAM DJ HAYNES TE AGARWAL A JACOBSON DC GOSSMANN HJ BAUMANN FH
Citation: Vc. Venezia et al., DEPTH PROFILING OF VACANCY CLUSTERS IN MEV-IMPLANTED SI USING AU LABELING, Applied physics letters, 73(20), 1998, pp. 2980-2982
TRANSIENT ENHANCED DIFFUSION FROM DECABORANE MOLECULAR ION-IMPLANTATION
Authors: AGARWAL A GOSSMANN HJ JACOBSON DC EAGLESHAM DJ SOSNOWSKI M POATE JM YAMADA I MATSUO J HAYNES TE
Citation: A. Agarwal et al., TRANSIENT ENHANCED DIFFUSION FROM DECABORANE MOLECULAR ION-IMPLANTATION, Applied physics letters, 73(14), 1998, pp. 2015-2017
MODELING OF THE ION MASS EFFECT ON TRANSIENT ENHANCED DIFFUSION - DEVIATION FROM THE -MODEL(1)
Authors: PELAZ L GILMER GH JARAIZ M HERNER SB GOSSMANN HJ EAGLESHAM DJ HOBLER G RAFFERTY CS BARBOLLA J
Citation: L. Pelaz et al., MODELING OF THE ION MASS EFFECT ON TRANSIENT ENHANCED DIFFUSION - DEVIATION FROM THE -MODEL(1), Applied physics letters, 73(10), 1998, pp. 1421-1423
EFFICIENT PRODUCTION OF SILICON-ON-INSULATOR FILMS BY COIMPLANTATION OF HE+ WITH H+
Authors: AGARWAL A HAYNES TE VENEZIA VC HOLLAND OW EAGLESHAM DJ
Citation: A. Agarwal et al., EFFICIENT PRODUCTION OF SILICON-ON-INSULATOR FILMS BY COIMPLANTATION OF HE+ WITH H+, Applied physics letters, 72(9), 1998, pp. 1086-1088
ON THE MECHANISM OF THE HYDROGEN-INDUCED EXFOLIATION OF SILICON
Authors: WELDON MK MARSICO VE CHABAL YJ AGARWAL A EAGLESHAM DJ SAPJETA J BROWN WL JACOBSON DC CAUDANO Y CHRISTMAN SB CHABAN EE
Citation: Mk. Weldon et al., ON THE MECHANISM OF THE HYDROGEN-INDUCED EXFOLIATION OF SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1065-1073
LIGHT NITROGEN IMPLANT FOR PREPARING THIN-GATE OXIDES
Authors: LIU CT MA Y BECERRO J NAKAHARA S EAGLESHAM DJ HILLENIUS SJ
Citation: Ct. Liu et al., LIGHT NITROGEN IMPLANT FOR PREPARING THIN-GATE OXIDES, IEEE electron device letters, 18(3), 1997, pp. 105-107
SURFACE ROUGHENING DURING LOW-TEMPERATURE SI(100) EPITAXY
Authors: KARPENKO OP YALISOVE SM EAGLESHAM DJ
Citation: Op. Karpenko et al., SURFACE ROUGHENING DURING LOW-TEMPERATURE SI(100) EPITAXY, Journal of applied physics, 82(3), 1997, pp. 1157-1165
EVOLUTION FROM POINT TO EXTENDED DEFECTS IN ION-IMPLANTED SILICON
Authors: BENTON JL LIBERTINO S KRINGHOJ P EAGLESHAM DJ POATE JM COFFA S
Citation: Jl. Benton et al., EVOLUTION FROM POINT TO EXTENDED DEFECTS IN ION-IMPLANTED SILICON, Journal of applied physics, 82(1), 1997, pp. 120-125
PHYSICAL-MECHANISMS OF TRANSIENT ENHANCED DOPANT DIFFUSION IN ION-IMPLANTED SILICON
Authors: STOLK PA GOSSMANN HJ EAGLESHAM DJ JACOBSON DC RAFFERTY CS GILMER GH JARAIZ M POATE JM LUFTMAN HS HAYNES TE
Citation: Pa. Stolk et al., PHYSICAL-MECHANISMS OF TRANSIENT ENHANCED DOPANT DIFFUSION IN ION-IMPLANTED SILICON, Journal of applied physics, 81(9), 1997, pp. 6031-6050
ION-BEAMS IN SILICON PROCESSING AND CHARACTERIZATION
Authors: CHASON E PICRAUX ST POATE JM BORLAND JO CURRENT MI DELARUBIA TD EAGLESHAM DJ HOLLAND OW LAW ME MAGEE CW MAYER JW MELNGAILIS J TASCH AF
Citation: E. Chason et al., ION-BEAMS IN SILICON PROCESSING AND CHARACTERIZATION, Journal of applied physics, 81(10), 1997, pp. 6513-6561
EVOLUTION OF INTERSTITIAL-TYPE AND VACANCY-TYPE DEFECTS UPON THERMAL ANNEALING IN ION-IMPLANTED SI
Authors: LIBERTINO S BENTON JL JACOBSON DC EAGLESHAM DJ POATE JM COFFA S KRINGHOJ P FUOCHI PG LAVALLE M
Citation: S. Libertino et al., EVOLUTION OF INTERSTITIAL-TYPE AND VACANCY-TYPE DEFECTS UPON THERMAL ANNEALING IN ION-IMPLANTED SI, Applied physics letters, 71(3), 1997, pp. 389-391
REDUCTION OF TRANSIENT DIFFUSION FROM 1-5 KEV SI-IMPLANTATION DUE TO SURFACE ANNIHILATION OF INTERSTITIALS( ION)
Authors: AGARWAL A GOSSMANN HJ EAGLESHAM DJ PELAZ L JACOBSON DC HAYNES TE EROKHIN YE
Citation: A. Agarwal et al., REDUCTION OF TRANSIENT DIFFUSION FROM 1-5 KEV SI-IMPLANTATION DUE TO SURFACE ANNIHILATION OF INTERSTITIALS( ION), Applied physics letters, 71(21), 1997, pp. 3141-3143
MICROSTRUCTURE OF SPUTTERED TIN ON AL
Authors: EAGLESHAM DJ BOWER JE MARCUS MA GROSS M MERCHANT S
Citation: Dj. Eaglesham et al., MICROSTRUCTURE OF SPUTTERED TIN ON AL, Applied physics letters, 71(2), 1997, pp. 219-221
INTERSTITIAL DEFECTS IN SILICON FROM 1-5 KEV SI-IMPLANTATION( ION)
Authors: AGARWAL A HAYNES TE EAGLESHAM DJ GOSSMANN HJ JACOBSON DC POATE JM EROKHIN YE
Citation: A. Agarwal et al., INTERSTITIAL DEFECTS IN SILICON FROM 1-5 KEV SI-IMPLANTATION( ION), Applied physics letters, 70(25), 1997, pp. 3332-3334
TRANSIENT ENHANCED DIFFUSION OF SB AND B DUE TO MEV SILICON IMPLANTS
Authors: EAGLESHAM DJ HAYNES TE GOSSMANN HJ JACOBSON DC STOLK PA POATE JM
Citation: Dj. Eaglesham et al., TRANSIENT ENHANCED DIFFUSION OF SB AND B DUE TO MEV SILICON IMPLANTS, Applied physics letters, 70(24), 1997, pp. 3281-3283
THE EFFECT OF IMPURITY CONTENT ON POINT-DEFECT EVOLUTION IN ION-IMPLANTED AND ELECTRON-IRRADIATED SI
Authors: LIBERTINO S BENTON JL JACOBSON DC EAGLESHAM DJ POATE JM COFFA S FUOCHI PG LAVALLE M
Citation: S. Libertino et al., THE EFFECT OF IMPURITY CONTENT ON POINT-DEFECT EVOLUTION IN ION-IMPLANTED AND ELECTRON-IRRADIATED SI, Applied physics letters, 70(22), 1997, pp. 3002-3004
B-DIFFUSION AND CLUSTERING IN ION-IMPLANTED SI - THE ROLE OF B-CLUSTER PRECURSORS
Authors: PELAZ L JARAIZ M GILMER GH GOSSMANN HJ RAFFERTY CS EAGLESHAM DJ POATE JM
Citation: L. Pelaz et al., B-DIFFUSION AND CLUSTERING IN ION-IMPLANTED SI - THE ROLE OF B-CLUSTER PRECURSORS, Applied physics letters, 70(17), 1997, pp. 2285-2287
THE EFFECT OF CARBON ON DIFFUSION IN SILICON
Authors: STOLK PA GOSSMANN HJ EAGLESHAM DJ POATE JM
Citation: Pa. Stolk et al., THE EFFECT OF CARBON ON DIFFUSION IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 275-281
DAMAGE AND DEFECTS FROM LOW-ENERGY IMPLANTS IN SI
Authors: EAGLESHAM DJ AGARWAL A HAYNES TE GOSSMANN HJ JACOBSON DC POATE JM
Citation: Dj. Eaglesham et al., DAMAGE AND DEFECTS FROM LOW-ENERGY IMPLANTS IN SI, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 1-4
IRON GETTERING MECHANISMS IN SILICON
Authors: BENTON JL STOLK PA EAGLESHAM DJ JACOBSON DC CHENG JY POATE JM HA NT HAYNES TE MYERS SM
Citation: Jl. Benton et al., IRON GETTERING MECHANISMS IN SILICON, Journal of applied physics, 80(6), 1996, pp. 3275-3284
FORMATION OF EXTENDED DEFECTS IN SILICON BY HIGH-ENERGY B-IMPLANTATION AND P-IMPLANTATION
Authors: CHENG JY EAGLESHAM DJ JACOBSON DC STOLK PA BENTON JL POATE JM
Citation: Jy. Cheng et al., FORMATION OF EXTENDED DEFECTS IN SILICON BY HIGH-ENERGY B-IMPLANTATION AND P-IMPLANTATION, Journal of applied physics, 80(4), 1996, pp. 2105-2112
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