Citation: Dp. Lymberopoulos et al., FLUID SIMULATION OF A PULSED-POWER INDUCTIVELY-COUPLED ARGON PLASMA, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 564-571
Citation: Na. Kubota et al., MOLECULAR-DYNAMICS SIMULATIONS OF LOW-ENERGY (25-200 EV) ARGON ION INTERACTIONS WITH SILICON SURFACES - SPUTTER YIELDS AND PRODUCT FORMATION PATHWAYS, Journal of applied physics, 83(8), 1998, pp. 4055-4063
Citation: V. Midha et Dj. Economou, A 2-DIMENSIONAL MODEL OF CHEMICAL-VAPOR INFILTRATION WITH RADIOFREQUENCY HEATING - II - STRATEGIES TO ACHIEVE COMPLETE DENSIFICATION, Journal of the Electrochemical Society, 145(10), 1998, pp. 3569-3580
Citation: Vi. Kolobov et Dj. Economou, ION-ION PLASMAS AND DOUBLE-LAYER FORMATION IN WEAKLY COLLISIONAL ELECTRONEGATIVE DISCHARGES, Applied physics letters, 72(6), 1998, pp. 656-658
Citation: Vi. Kolobov et al., ELECTRON KINETICS AND NON-JOULE HEATING IN NEAR-COLLISIONLESS INDUCTIVELY-COUPLED PLASMAS, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics, 55(3), 1997, pp. 3408-3422
Authors:
JOHANNES J
BARTEL T
HEBNER GA
WOODWORTH J
ECONOMOU DJ
Citation: J. Johannes et al., DIRECT SIMULATION MONTE-CARLO OF INDUCTIVELY-COUPLED PLASMA AND COMPARISON WITH EXPERIMENTS, Journal of the Electrochemical Society, 144(7), 1997, pp. 2448-2455
Citation: V. Midha et Dj. Economou, A 2-DIMENSIONAL MODEL OF CHEMICAL-VAPOR INFILTRATION WITH RADIO-FREQUENCY HEATING, Journal of the Electrochemical Society, 144(11), 1997, pp. 4062-4071
Citation: Sd. Athavale et Dj. Economou, REALIZATION OF ATOMIC LAYER ETCHING OF SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3702-3705
Authors:
HOFFMAN DM
RANGARAJAN SP
ATHAVALE SD
ECONOMOU DJ
LIU JR
ZHENG ZS
CHU WK
Citation: Dm. Hoffman et al., CHEMICAL-VAPOR-DEPOSITION OF ALUMINUM AND GALLIUM NITRIDE THIN-FILMS FROM METALORGANIC PRECURSORS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(2), 1996, pp. 306-311
Authors:
JOHANNES J
BARTEL TJ
ECONOMOU DJ
LYMBEROPOULOS DP
WISE RS
Citation: J. Johannes et al., SIMULATION IMAGES FROM A LOW-PRESSURE CHLORINE PLASMA REACTOR USING DSMC, IEEE transactions on plasma science, 24(1), 1996, pp. 127-128
Authors:
LYMBEROPOULOS DP
WISE RS
ECONOMOU DJ
BARTEL TJ
Citation: Dp. Lymberopoulos et al., ION DENSITY AND TEMPERATURE DISTRIBUTIONS IN AN INDUCTIVELY-COUPLED HIGH-PLASMA DENSITY REACTOR, IEEE transactions on plasma science, 24(1), 1996, pp. 129-130
Citation: Dj. Economou et Tj. Bartel, DIRECT SIMULATION MONTE-CARLO (DSMC) OF RAREFIED-GAS FLOW DURING ETCHING OF LARGE-DIAMETER (300-MM) WAFERS, IEEE transactions on plasma science, 24(1), 1996, pp. 131-132
Citation: Rs. Wise et al., RAPID 2-DIMENSIONAL SELF-CONSISTENT SIMULATION OF INDUCTIVELY-COUPLEDPLASMA AND COMPARISON WITH EXPERIMENTAL-DATA, Applied physics letters, 68(18), 1996, pp. 2499-2501
Citation: Dp. Lymberopoulos et Dj. Economou, 2-DIMENSIONAL SELF-CONSISTENT RADIO-FREQUENCY PLASMA SIMULATIONS RELEVANT TO THE GASEOUS ELECTRONICS CONFERENCE RF REFERENCE CELL, Journal of research of the National Institute of Standards and Technology, 100(4), 1995, pp. 473-494
Citation: Rs. Wise et al., A 2-REGION MODEL OF A RADIOFREQUENCY LOW-PRESSURE, HIGH-DENSITY PLASMA, Plasma sources science & technology, 4(3), 1995, pp. 317-331
Authors:
HOFFMAN DM
RANGARAJAN P
ATHAVALE SD
ECONOMOU DJ
LIU JR
ZHENG ZS
CHU WK
Citation: Dm. Hoffman et al., PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SILICON, GERMANIUM, AND TIN NITRIDE THIN-FILMS FROM METALORGANIC PRECURSORS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 820-825
Citation: Sd. Athavale et Dj. Economou, MOLECULAR-DYNAMICS SIMULATION OF ATOMIC LAYER ETCHING OF SILICON, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 966-971
Citation: P. Jiang et al., EFFECT OF POWER MODULATION ON RADICAL CONCENTRATION AND UNIFORMITY INA SINGLE-WAFER PLASMA REACTOR, Plasma chemistry and plasma processing, 15(3), 1995, pp. 383-408
Citation: Ch. Wu et al., SPECIAL ISSUE ON MODELING AND SIMULATION OF COLLISIONAL LOW-TEMPERATURE PLASMAS, IEEE transactions on plasma science, 23(4), 1995, pp. 501-502
Citation: Dp. Lymberopoulos et Dj. Economou, 2-DIMENSIONAL SIMULATION OF POLYSILICON ETCHING WITH CHLORINE IN A HIGH-DENSITY PLASMA REACTOR, IEEE transactions on plasma science, 23(4), 1995, pp. 573-580
Authors:
ECONOMOU DJ
BARTEL TJ
WISE RS
LYMBEROPOULOS DP
Citation: Dj. Economou et al., 2-DIMENSIONAL DIRECT SIMULATION MONTE-CARLO (DSMC) OF REACTIVE NEUTRAL AND ION FLOW IN A HIGH-DENSITY PLASMA REACTOR, IEEE transactions on plasma science, 23(4), 1995, pp. 581-590
Citation: Dp. Lymberopoulos et Dj. Economou, SPATIOTEMPORAL ELECTRON DYNAMICS IN RADIOFREQUENCY GLOW-DISCHARGES - FLUID VERSUS DYNAMIC MONTE-CARLO SIMULATIONS, Journal of physics. D, Applied physics, 28(4), 1995, pp. 727-737
Authors:
HOFFMAN DM
RANGARAJAN SP
ATHAVALE SD
DESHMUKH SC
ECONOMOU DJ
LIU JR
ZHENG ZS
CHU WK
Citation: Dm. Hoffman et al., PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SILICON-NITRIDE FILMS FROM A METAL-ORGANIC PRECURSOR, Journal of materials research, 9(12), 1994, pp. 3019-3021
Citation: Dp. Lymberopoulos et Dj. Economou, MODELING AND SIMULATION OF GLOW-DISCHARGE PLASMA REACTORS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1229-1236