Authors: SENZ S EGGER U SCHULTZ M GOSELE U ITO H

Citation: S. Senz et al., INTERDIFFUSION IN GAAS(1-X)SBX GAAS SUPERLATTICES STUDIED WITH HIGH-RESOLUTION X-RAY-DIFFRACTION AND SECONDARY-ION MASS-SPECTROSCOPY/, Journal of applied physics, 84(5), 1998, pp. 2546-2550

Authors: SCHULTZ M EGGER U SCHOLZ R BREITENSTEIN O GOSELE U TAN TY

Citation: M. Schultz et al., EXPERIMENTAL AND COMPUTER-SIMULATION STUDIES OF DIFFUSION MECHANISMS ON THE ARSENIC SUBLATTICE OF GALLIUM-ARSENIDE, Journal of applied physics, 83(10), 1998, pp. 5295-5301

Authors: EGGER U SCHULTZ M WERNER P

Citation: U. Egger et al., INTERDIFFUSION STUDIES IN GAASP GAAS AND GAASSB/GAAS SUPERLATTICES UNDER VARIOUS ARSENIC VAPOR-PRESSURES/, Journal of applied physics, 81(9), 1997, pp. 6056-6061

Authors: HERZOG L EGGER U BREITENSTEIN O HETTWER HG

Citation: L. Herzog et al., DEFECTS IN GAAS AFTER SI INDIFFUSION AND ANNEALING - A TEM AND CL STUDY, Materials science & engineering. B, Solid-state materials for advanced technology, 30(1), 1995, pp. 43-53

Authors: KELLER CU DEUBNE RFL EGGER U FLECK B POVEL HP

Citation: Cu. Keller et al., ON THE STRENGTH OF SOLAR INTRA-NETWORK FIELDS, Astronomy and astrophysics, 286(2), 1994, pp. 626-634

Authors: BREITENSTEIN O EGGER U HEYDENREICH J

Citation: O. Breitenstein et al., SCANNING-DLTS, EBIC, AND CL INVESTIGATIONS OF DIAMOND INDENTATIONS INGAAS P(+)N JUNCTIONS, Scanning, 15(6), 1993, pp. 366-371