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Results:
1-7
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Results: 7
Authors:
HALLIN C
IVANOV IG
EGILSSON T
HENRY A
KORDINA O
JANZEN E
Citation: C. Hallin et al., THE MATERIAL QUALITY OF CVD-GROWN SIC USING DIFFERENT CARBON PRECURSORS, Journal of crystal growth, 183(1-2), 1998, pp. 163-174
Authors:
HENRY A
IVANOV IG
EGILSSON T
HALLIN C
ELLISON A
KORDINA O
LINDEFELT U
JANZEN E
Citation: A. Henry et al., HIGH-QUALITY 4H-SIC GROWN ON VARIOUS SUBSTRATE ORIENTATIONS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1289-1292
Authors:
KIES R
EGILSSON T
GHIBAUDO G
PANANAKAKIS G
Citation: R. Kies et al., ASSESSMENT OF OXIDE CHARGE-DENSITY AND CENTROID FROM FOWLER-NORDHEIM DERIVATIVE CHARACTERISTICS IN MOS STRUCTURES AFTER UNIFORM GATE STRESS, Microelectronics and reliability, 36(11-12), 1996, pp. 1619-1622
Authors:
KIES R
EGILSSON T
GHIBAUDO G
PANANAKAKIS G
Citation: R. Kies et al., A METHOD FOR THE ASSESSMENT OF OXIDE CHARGE-DENSITY AND CENTROID IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES AFTER UNIFORM GATE STRESS, Applied physics letters, 68(26), 1996, pp. 3790-3792
Authors:
GISLASON HP
EGILSSON T
LEOSSON K
YANG BH
Citation: Hp. Gislason et al., LITHIUM PASSIVATION AND ELECTRIC-FIELD-ASSISTED REACTIVATION OF ACCEPTORS IN GAAS, Physical review. B, Condensed matter, 51(15), 1995, pp. 9677-9681
Authors:
EGILSSON T
YANG BH
GISLASON HP
Citation: T. Egilsson et al., PASSIVATION OF SHALLOW AND DEEP LEVELS BY LITHIUM IN GAAS, Physica scripta. T, 54, 1994, pp. 28-33
Authors:
EGILSSON T
GISLASON HP
YANG BH
Citation: T. Egilsson et al., PASSIVATION OF COPPER BY LITHIUM IN P-TYPE GAAS, Physical review. B, Condensed matter, 50(3), 1994, pp. 1996-1998
Risultati:
1-7
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