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Results: 1-6 |
Results: 6

Authors: IM S EISEN F NICOLET MA TANNER MO WANG KL THEODORE ND
Citation: S. Im et al., STRAIN-CONSERVING DOPING OF A PSEUDOMORPHIC METASTABLE GE0.06SI0.94 LAYER ON SI(100) BY LOW-DOSE BF2+ IMPLANTATION, Journal of applied physics, 81(4), 1997, pp. 1695-1699

Authors: IM S SONG JH LIE DYC EISEN F ATWATER H NICOLET MA
Citation: S. Im et al., SIGEC ALLOY LAYER FORMATION BY HIGH-DOSE C+ IMPLANTATIONS INTO PSEUDOMORPHIC METASTABLE GE0.08SI0.92 ON SI(100), Journal of applied physics, 81(4), 1997, pp. 1700-1703

Authors: LIE DYC SONG JH EISEN F NICOLET MA THEODORE ND
Citation: Dyc. Lie et al., STRAIN EVOLUTION AND DOPANT ACTIVATION IN P-IMPLANTED METASTABLE PSEUDOMORPHIC SI(100) G(0.12)SI(0.88)/, Journal of electronic materials, 25(1), 1996, pp. 87-92

Authors: LIE DYC SONG JH VANTOMME A EISEN F NICOLET MA THEODORE ND CARNS TK WANG KL
Citation: Dyc. Lie et al., DEPENDENCE OF DAMAGE AND STRAIN ON THE TEMPERATURE OF SI IRRADIATION IN EPITAXIAL GE0.10SI0.90 FILMS ON SI(100), Journal of applied physics, 77(6), 1995, pp. 2329-2338

Authors: LIE DYC VANTOMME A EISEN F VREELAND T NICOLET MA CARNS TK WANG KL HOLLANDER B
Citation: Dyc. Lie et al., DAMAGE AND STRAIN IN PSEUDOMORPHIC VS RELAXED GEXSI1-X LAYERS ON SI(100) GENERATED BY SI ION IRRADIATION, Journal of electronic materials, 23(4), 1994, pp. 369-373

Authors: LIE DYC VANTOMME A EISEN F VREELAND T NICOLET MA CARNS TK ARBETENGELS V WANG KL
Citation: Dyc. Lie et al., DAMAGE AND STRAIN IN EPITAXIAL GEXSI1-X FILMS IRRADIATED WITH SI, Journal of applied physics, 74(10), 1993, pp. 6039-6045
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