Authors:
IM S
EISEN F
NICOLET MA
TANNER MO
WANG KL
THEODORE ND
Citation: S. Im et al., STRAIN-CONSERVING DOPING OF A PSEUDOMORPHIC METASTABLE GE0.06SI0.94 LAYER ON SI(100) BY LOW-DOSE BF2+ IMPLANTATION, Journal of applied physics, 81(4), 1997, pp. 1695-1699
Authors:
IM S
SONG JH
LIE DYC
EISEN F
ATWATER H
NICOLET MA
Citation: S. Im et al., SIGEC ALLOY LAYER FORMATION BY HIGH-DOSE C+ IMPLANTATIONS INTO PSEUDOMORPHIC METASTABLE GE0.08SI0.92 ON SI(100), Journal of applied physics, 81(4), 1997, pp. 1700-1703
Authors:
LIE DYC
SONG JH
EISEN F
NICOLET MA
THEODORE ND
Citation: Dyc. Lie et al., STRAIN EVOLUTION AND DOPANT ACTIVATION IN P-IMPLANTED METASTABLE PSEUDOMORPHIC SI(100) G(0.12)SI(0.88)/, Journal of electronic materials, 25(1), 1996, pp. 87-92
Authors:
LIE DYC
SONG JH
VANTOMME A
EISEN F
NICOLET MA
THEODORE ND
CARNS TK
WANG KL
Citation: Dyc. Lie et al., DEPENDENCE OF DAMAGE AND STRAIN ON THE TEMPERATURE OF SI IRRADIATION IN EPITAXIAL GE0.10SI0.90 FILMS ON SI(100), Journal of applied physics, 77(6), 1995, pp. 2329-2338
Authors:
LIE DYC
VANTOMME A
EISEN F
VREELAND T
NICOLET MA
CARNS TK
WANG KL
HOLLANDER B
Citation: Dyc. Lie et al., DAMAGE AND STRAIN IN PSEUDOMORPHIC VS RELAXED GEXSI1-X LAYERS ON SI(100) GENERATED BY SI ION IRRADIATION, Journal of electronic materials, 23(4), 1994, pp. 369-373