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Results: 1-8 |
Results: 8
COMPARISON OF GAIN AND THRESHOLD CURRENT-DENSITY FOR INGAASP GAAS (LAMBDA=808NM) LASERS WITH DIFFERENT QUANTUM-WELL THICKNESS/
Authors: YI HJ DIAZ J ELIASHEVICH I LUKAS G KIM S WU D ERDTHMANN M JELEN C SLIVKEN S WANG LJ RAZEGHI M
Citation: Hj. Yi et al., COMPARISON OF GAIN AND THRESHOLD CURRENT-DENSITY FOR INGAASP GAAS (LAMBDA=808NM) LASERS WITH DIFFERENT QUANTUM-WELL THICKNESS/, Journal of applied physics, 79(11), 1996, pp. 8832-8834
HIGH-POWER ALUMINUM-FREE INGAASP GAAS PUMPING DIODE-LASERS/
Authors: RAZEGHI M ELIASHEVICH I DIAZ J YI HJ KIM S ERDTMANN M WU D WANG LJ
Citation: M. Razeghi et al., HIGH-POWER ALUMINUM-FREE INGAASP GAAS PUMPING DIODE-LASERS/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 34-41
TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT-DENSITY J(TH) AND DIFFERENTIAL EFFICIENCY ETA(D) OF HIGH-POWER INGAASP GAAS (LAMBDA=0.8-MU-M) LASERS/
Authors: YI HJ DIAZ J ELIASHEVICH I STANTON M ERDTMANN M HE X WANG LJ RAZEGHI M
Citation: Hj. Yi et al., TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT-DENSITY J(TH) AND DIFFERENTIAL EFFICIENCY ETA(D) OF HIGH-POWER INGAASP GAAS (LAMBDA=0.8-MU-M) LASERS/, Applied physics letters, 66(3), 1995, pp. 253-255
OPTIMIZED STRUCTURE FOR INGAASP GAAS 808-NM HIGH-POWER LASERS/
Authors: YI HJ DIAZ J WANG LJ ELIASHEVICH I KIM S WILLIAMS R ERDTMANN M HE X KOLEV E RAZEGHI M
Citation: Hj. Yi et al., OPTIMIZED STRUCTURE FOR INGAASP GAAS 808-NM HIGH-POWER LASERS/, Applied physics letters, 66(24), 1995, pp. 3251-3253
RELIABILITY OF ALUMINUM-FREE 808 NM HIGH-POWER LASER-DIODES WITH UNCOATED MIRRORS
Authors: ELIASHEVICH I DIAZ J YI H WANG L RAZEGHI M
Citation: I. Eliashevich et al., RELIABILITY OF ALUMINUM-FREE 808 NM HIGH-POWER LASER-DIODES WITH UNCOATED MIRRORS, Applied physics letters, 66(23), 1995, pp. 3087-3089
INGAPINGAASP GAAS 0.808-MU-M SEPARATE-CONFINEMENT LASER-DIODES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/
Authors: ELIASHEVICH JD ELIASHEVICH I MOBARHAN K KOLEV E WANG LJ GARBUZOV DZ RAZEGHI M
Citation: Jd. Eliashevich et al., INGAPINGAASP GAAS 0.808-MU-M SEPARATE-CONFINEMENT LASER-DIODES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, IEEE photonics technology letters, 6(2), 1994, pp. 132-134
HIGH-POWER INGAASP GAAS 0.8-MU-M LASER-DIODES AND PECULIARITIES OF OPERATIONAL CHARACTERISTICS/
Authors: DIAZ J ELIASHEVICH I HE X YI H WANG L KOLEV E GARBUZOV D RAZEGHI M
Citation: J. Diaz et al., HIGH-POWER INGAASP GAAS 0.8-MU-M LASER-DIODES AND PECULIARITIES OF OPERATIONAL CHARACTERISTICS/, Applied physics letters, 65(8), 1994, pp. 1004-1005
THEORETICAL INVESTIGATION OF MINORITY-CARRIER LEAKAGES OF HIGH-POWER 0.8-MU-M INGAASP INGAP/GAAS LASER-DIODES/
Authors: DIAZ J ELIASHEVICH I YI H HE X STANTON M ERDTMANN M WANG L RAZEGHI M
Citation: J. Diaz et al., THEORETICAL INVESTIGATION OF MINORITY-CARRIER LEAKAGES OF HIGH-POWER 0.8-MU-M INGAASP INGAP/GAAS LASER-DIODES/, Applied physics letters, 65(18), 1994, pp. 2260-2262
Risultati: 1-8 |