Authors: BETI L CHINE Z ELJANI B OUESLATI M

Citation: L. Beti et al., VERY HIGH-SILICON CONCENTRATION BY MOVPE IN GAAS, Physica status solidi. a, Applied research, 168(2), 1998, pp. 453-462

Authors: REBEY A BEJI L ELJANI B GIBART P

Citation: A. Rebey et al., OPTICAL MONITORING OF THE GROWTH-RATE REDUCTION BY CCL4 DURING METALORGANIC VAPOR-PHASE EPITAXY DEPOSITION OF CARBON-DOPED GAAS, Journal of crystal growth, 191(4), 1998, pp. 734-739

Authors: BEJI L ELJANI B GIBART P PORTAL JC BASMAJI P

Citation: L. Beji et al., HYDROSTATIC-PRESSURE STUDIES OF GAAS TUNNEL-DIODES, Journal of applied physics, 83(10), 1998, pp. 5573-5575

Authors: BEAUMONT B VAILLE M BOUFADEN T ELJANI B GIBART P

Citation: B. Beaumont et al., HIGH-QUALITY GAN GROWN BY MOVPE, Journal of crystal growth, 170(1-4), 1997, pp. 316-320

Authors: GUERMAZI S TOUREILLE A GRILL C ELJANI B LAKHOUA N

Citation: S. Guermazi et al., EXTENDED GENERATION PROFILE - EBIC MODEL, Journal de physique. III, 6(4), 1996, pp. 481-490

Authors: WILLKE U MAUDE DK SALLESE JM FILLE ML ELJANI B GIBART P PORTAL JC

Citation: U. Willke et al., OBSERVATION OF THE DX CENTER IN PB-DOPED GAAS, Applied physics letters, 62(26), 1993, pp. 3467-3469