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Results:
1-23
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Results: 23
Authors:
WUSTNECK R
ENDERS P
EBISCH T
MILLER R
SIEGEL S
Citation: R. Wustneck et al., SURFACE BEHAVIOR OF SPREAD SODIUM EICOSANYL SULFATE MONOLAYERS - 2 - SURFACE STRESS-RELAXATION BEHAVIOR, Journal of colloid and interface science (Print), 206(1), 1998, pp. 33-43
Authors:
KEATING T
MINCH J
CHANG CS
ENDERS P
FANG W
CHUANG SL
TANBUNEK T
CHEN YK
SERGENT M
Citation: T. Keating et al., OPTICAL GAIN AND REFRACTIVE-INDEX OF A LASER-AMPLIFIER IN THE PRESENCE OF PUMP LIGHT FOR CROSS-GAIN AND CROSS-PHASE MODULATION, IEEE photonics technology letters, 9(10), 1997, pp. 1358-1360
Authors:
ENDERS P
WOERNER M
Citation: P. Enders et M. Woerner, 8-BAND K-CENTER-DOT-P HAMILTON MATRIX FOR STRAINED TETRAHEDRAL SEMICONDUCTORS - 4X4-BLOCK DIAGONALIZATION FOR SYMMETRICAL K-DIRECTIONS (VOL194, PG 585, 1996), Physica status solidi. b, Basic research, 200(1), 1997, pp. 307-307
Authors:
WUSTNECK R
ENDERS P
EBISCH T
MILLER R
Citation: R. Wustneck et al., AXIALSYMMETRIC STRESS-RELAXATION AND SURFACE DILATION RHEOLOGY OF DOCOSANIC ACID MONOLAYERS SPREAD AT THE INTERFACE OF PENDANT DROPS IN THESHORT-TIME REGION, Thin solid films, 298(1-2), 1997, pp. 39-46
Authors:
ENDERS P
MULLER R
KLEHR A
GUNDLACH H
Citation: P. Enders et al., 8-BAND KP THEORY OF THE MATERIAL GAIN OF STRAINED TETRAHEDRAL SEMICONDUCTORS - APPLICATION TO 1.3 MU-M-INGAASP LASERS SUBJECT TO ADDITIONALEXTERNAL UNIAXIAL-STRESS, IEE proceedings. Optoelectronics, 143(1), 1996, pp. 62-66
Authors:
ENDERS P
DECOGAN D
Citation: P. Enders et D. Decogan, DISCRETE MODELS OF HEAT-FLOW IN LAYERED MATERIALS USING SIMPLE AND CORRELATED RANDOM-WALKS, International journal of numerical modelling, 9(6), 1996, pp. 445-457
Authors:
ENDERS P
Citation: P. Enders, CAN THE TRANSMISSION-LINE MATRIX-METHOD YIELD STATIONARY SOLUTIONS OFTHE TIME-DEPENDENT SCHRODINGER-EQUATION, International journal of numerical modelling, 9(4), 1996, pp. 321-323
Authors:
SUISKY D
NEUGEBAUER F
ENDERS P
Citation: D. Suisky et al., MAGNETIC-FIELD DEPENDENT COUPLING OF VALENCE-BAND STATES IN ASYMMETRIC DOUBLE-QUANTUM WELLS, Acta Physica Polonica. A, 90(5), 1996, pp. 1095-1099
Authors:
ENDERS P
WOERNER M
Citation: P. Enders et M. Woerner, 8-BAND K-CENTER-DOT-P HAMILTON MATRIX FOR STRAINED TETRAHEDRAL SEMICONDUCTORS - 4X4 BLOCK DIAGONALIZATION FOR SYMMETRICAL K-DIRECTIONS, Physica status solidi. b, Basic research, 194(2), 1996, pp. 585-599
Authors:
ENDERS P
WOERNER M
Citation: P. Enders et M. Woerner, EXACT 4X4 BLOCK DIAGONALIZATION OF THE 8-BAND K-CENTER-DOT-P HAMILTONIAN MATRIX FOR TETRAHEDRAL SEMICONDUCTORS AND ITS APPLICATION TO STRAINED QUANTUM-WELLS, Semiconductor science and technology, 11(7), 1996, pp. 983-988
Authors:
ENDERS P
Citation: P. Enders, SPECIAL-LINES APPROXIMATION TO BRILLOUIN-ZONE INTEGRATION, Semiconductor science and technology, 11(2), 1996, pp. 187-189
Authors:
ENDERS P
Citation: P. Enders, SPECIAL-LINES APPROXIMATION TO BRILLOUIN-ZONE INTEGRATION - IMPROVED SET OF SPECIAL LINES (VOL 11, PG 187, 1996), Semiconductor science and technology, 11(12), 1996, pp. 1927-1929
Authors:
WUSTNECK R
ENDERS P
MILLER R
Citation: R. Wustneck et al., ON THE ERROR PROPAGATION OF EXPERIMENTAL SURFACE-TENSION VALUES TO PARAMETERS OF ADSORPTION-ISOTHERMS, Colloids and surfaces. A, Physicochemical and engineering aspects, 100, 1995, pp. 207-215
Authors:
ENDERS P
Citation: P. Enders, A NEW APPROXIMATION FOR BLOCK DIAGONALIZING THE 8-BAND K-CENTER-DOT-P-HAMILTONIAN, Physica status solidi. b, Basic research, 187(2), 1995, pp. 541-550
Authors:
BARWOLFF A
PUCHERT R
ENDERS P
MENZEL U
ACKERMANN D
Citation: A. Barwolff et al., ANALYSIS OF THERMAL-BEHAVIOR OF HIGH-POWER SEMICONDUCTOR-LASER ARRAYSBY MEANS OF THE FINITE-ELEMENT METHOD (FEM), Journal of thermal analysis, 45(3), 1995, pp. 417-436
Authors:
GUNDLACH H
KLEHR A
MULLER R
ENDERS P
Citation: H. Gundlach et al., POLARIZATION BISTABILITY IN STRAINED 1.3 MU-M SEMICONDUCTOR-LASERS CONTROLLED BY TEMPERATURE AND EXTERNAL MECHANICAL FORCE, Semiconductor science and technology, 10(8), 1995, pp. 1181-1185
Authors:
MENZEL U
BARWOLFF A
ENDERS P
ACKERMANN D
PUCHERT R
VOSS M
Citation: U. Menzel et al., MODELING THE TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT, EXTERNAL DIFFERENTIAL EFFICIENCY AND LASING WAVELENGTH IN QW LASER-DIODES, Semiconductor science and technology, 10(10), 1995, pp. 1382-1392
Authors:
ENDERS P
BARWOLFF A
WOERNER M
SUISKY D
Citation: P. Enders et al., K-CENTER-DOT-P THEORY OF ENERGY-BANDS, WAVE-FUNCTIONS, AND OPTICAL SELECTION-RULES IN STRAINED TETRAHEDRAL SEMICONDUCTORS, Physical review. B, Condensed matter, 51(23), 1995, pp. 16695-16704
Authors:
KLEHR A
MULLER R
ENDERS P
VOSS M
ELSAESSER T
Citation: A. Klehr et al., POLARIZATION-MODE DYNAMICS IN STRAINED 1.3 MU-M INGAASP INP LASERS UNDER PICOSECOND CURRENT MODULATION/, Optics communications, 118(3-4), 1995, pp. 323-328
Authors:
DECOGAN D
ENDERS P
Citation: D. Decogan et P. Enders, DISCRETE GREEN-FUNCTIONS AND HYBRID MODELING OF THERMAL AND PARTICLE DIFFUSION, International journal of numerical modelling, 7(6), 1994, pp. 407-418
Authors:
WUSTNECK R
ENDERS P
FIEDLER H
Citation: R. Wustneck et al., DETERMINATION OF AGGREGATION NUMBERS AND IONIZATION DEGREE OF MICELLES USING SURFACE-TENSION ISOTHERMS OF MALEIC-ACID MONO[2-(4-ALKYLPIPERAZINYL)ETHYL ESTERS], Langmuir, 10(11), 1994, pp. 3955-3958
Authors:
ENDERS P
DECOGAN D
Citation: P. Enders et D. Decogan, THE EFFICIENCY OF TRANSMISSION-LINE MATRIX MODELING - A RIGOROUS VIEWPOINT, International journal of numerical modelling, 6(2), 1993, pp. 109-126
Authors:
ENDERS P
Citation: P. Enders, COMPLETE CHARACTERIZATION OF LASER-DIODE THERMAL CIRCUIT BY VOLTAGE TRANSIENT MEASUREMENTS, Electronics Letters, 29(11), 1993, pp. 1022-1023
Risultati:
1-23
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