Authors:
PARLAK M
ERCELEBI C
GUNAL J
OZKAN H
GASANLY NM
Citation: M. Parlak et al., STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF AG3GA5TE9 AND AG3IN5SE9CRYSTALS, Crystal research and technology, 33(6), 1998, pp. 923-928
Citation: M. Parlak et C. Ercelebi, THE EFFECT OF SUBSTRATE AND POSTANNEALING TEMPERATURE ON THE STRUCTURAL AND OPTICAL-PROPERTIES OF POLYCRYSTALLINE INSE THIN-FILMS, Thin solid films, 322(1-2), 1998, pp. 334-339
Citation: H. Bayhan et C. Ercelebi, ELECTRICAL CHARACTERIZATION OF VACUUM-DEPOSITED N-CDS P-CDTE HETEROJUNCTION DEVICES/, Semiconductor science and technology, 12(5), 1997, pp. 600-608
Authors:
PARLAK M
ERCELEBI C
GUNAL I
OZKAN H
GASANLY NM
CULFAZ A
Citation: M. Parlak et al., CRYSTAL DATA, ELECTRICAL-RESISTIVITY AND MOBILITY IN CU3IN5SE9 AND CU3IN5TE9 SINGLE-CRYSTALS, Crystal research and technology, 32(3), 1997, pp. 395-400
Authors:
PARLAK H
ERCELEBI C
GUNAL I
OZKAN H
GASANLY NM
Citation: H. Parlak et al., ANISOTROPY OF ELECTRICAL-RESISTIVITY AND HOLE MOBILITY IN INTE SINGLE-CRYSTALS, Crystal research and technology, 31(5), 1996, pp. 673-678