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Results: 1-11 |
Results: 11

Authors: ERES G HUI FYC THUNDAT TG JOY DC
Citation: G. Eres et al., NANOFABRICATION BY DIRECT EPITAXIAL-GROWTH, Microelectronic engineering, 42, 1998, pp. 519-522

Authors: HUI FYC ERES G JOY DC
Citation: Fyc. Hui et al., FACTORS AFFECTING RESOLUTION IN SCANNING ELECTRON-BEAM-INDUCED PATTERNING OF SURFACE-ADSORPTION LAYERS, Applied physics letters, 72(3), 1998, pp. 341-343

Authors: ERES G HUI FYC THUNDAT T JOY DC
Citation: G. Eres et al., DIRECT EPITAXIAL-GROWTH OF THIN-FILM STRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2934-2939

Authors: LUBBEN D ERES G JELLISON GE WESTBROOK RD WOOD RF
Citation: D. Lubben et al., GROWTH AND DOPING OF SI LAYERS BY MOLECULAR-JET CHEMICAL-VAPOR-DEPOSITION - DEVICE FABRICATION, Applied physics letters, 71(19), 1997, pp. 2812-2814

Authors: JONES ME ROADMAN SE LAM AM ERES G ENGSTROM JR
Citation: Me. Jones et al., SUPERSONIC MOLECULAR-BEAM STUDIES OF THE DISSOCIATIVE CHEMISORPTION OF GEH4 AND GE2H6 ON THE GE(100) AND GE(111) SURFACES, The Journal of chemical physics, 105(16), 1996, pp. 7140-7151

Authors: TISCHLER JZ BUDAI JD JESSON DE ERES G ZSCHACK P BARIBEAU JM HOUGHTON DC
Citation: Jz. Tischler et al., ORDERED STRUCTURES IN SIXGE1-X ALLOY THIN-FILMS, Physical review. B, Condensed matter, 51(16), 1995, pp. 10947-10955

Authors: ERES G
Citation: G. Eres, KINETIC MODELING OF THE ATOMIC LAYER EPITAXY PROCESSING WINDOW IN GROUP-IV SEMICONDUCTOR GROWTH, Applied physics letters, 67(12), 1995, pp. 1727-1729

Authors: SHARP JW ERES G
Citation: Jw. Sharp et G. Eres, KINETICS OF HYDROGEN DESORPTION FROM SI(100) AND SI(111) SURFACES FOLLOWING CHEMISORPTION OF DISILANE AND TRISILANE, Surface science, 320(1-2), 1994, pp. 169-173

Authors: ERES G SHARP JW
Citation: G. Eres et Jw. Sharp, INVESTIGATION OF THE KINETICS OF DIGERMANE CHEMISORPTION AND REACTION-PRODUCT DESORPTION IN THIN-FILM GROWTH OF GERMANIUM, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 11(5), 1993, pp. 2463-2471

Authors: ERES G SHARP JW
Citation: G. Eres et Jw. Sharp, THE ROLE OF HYDRIDE COVERAGE IN SURFACE-LIMITED THIN-FILM GROWTH OF EPITAXIAL SILICON AND GERMANIUM, Journal of applied physics, 74(12), 1993, pp. 7241-7250

Authors: SHARP JW ERES G
Citation: Jw. Sharp et G. Eres, KINETICS OF HYDROGEN DESORPTION IN SURFACE-LIMITED THIN-FILM GROWTH OF SIGE ALLOYS, Applied physics letters, 62(22), 1993, pp. 2807-2809
Risultati: 1-11 |