Authors:
Omeltchenko, A
Bachlechner, ME
Nakano, A
Kalia, RK
Vashishta, P
Ebbsjo, I
Madhukar, A
Messina, P
Citation: A. Omeltchenko et al., Stress domains in Si(111)/a-Si3N4 nanopixel: Ten-million-atom molecular dynamics simulations on parallel computers, PHYS REV L, 84(2), 2000, pp. 318-321
Authors:
Bachlechner, ME
Omeltchenko, A
Nakano, A
Kalia, RK
Vashishta, P
Ebbsjo, I
Madhukar, A
Citation: Me. Bachlechner et al., Dislocation emission at the silicon/silicon nitride interface: A million atom molecular dynamics simulation on parallel computers, PHYS REV L, 84(2), 2000, pp. 322-325
Authors:
Shimojo, F
Ebbsjo, I
Kalia, RK
Nakano, A
Rino, JP
Vashishta, P
Citation: F. Shimojo et al., Molecular dynamics simulation of structural transformation in silicon carbide under pressure, PHYS REV L, 84(15), 2000, pp. 3338-3341
Authors:
Ebbsjo, I
Kalia, RK
Nakano, A
Rino, JP
Vashishta, P
Citation: I. Ebbsjo et al., Topology of amorphous gallium arsenide on intermediate length scales: A molecular dynamics study, J APPL PHYS, 87(11), 2000, pp. 7708-7711
Authors:
Nakano, A
Bachlechner, ME
Branicio, P
Campbell, TJ
Ebbsjo, I
Kalia, RK
Madhukar, A
Ogata, S
Omeltchenko, A
Rino, JP
Shimojo, F
Walsh, P
Vashishta, P
Citation: A. Nakano et al., Large-scale atomistic modeling of nanoelectronic structures, IEEE DEVICE, 47(10), 2000, pp. 1804-1810
Authors:
Bachlechner, ME
Kalia, RK
Nakano, A
Omeltchenko, A
Vashishta, P
Ebbsjo, I
Madhukar, A
Zhao, GL
Citation: Me. Bachlechner et al., Structural correlations at Si/Si3N4 interface and atomic stresses in Si/Si3N4 nanopixel-10 million-atom molecular dynamics simulation on parallel computers, J EUR CERAM, 19(13-14), 1999, pp. 2265-2272
Citation: N. Zotov et al., Calculation of Raman spectra and vibrational properties of silicate glasses: Comparison between Na2Si4O9 and SiO2 glasses, PHYS REV B, 60(9), 1999, pp. 6383-6397