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Results: 1-9 |
Results: 9
High-power laser diodes with dry-etched mirror facets and integrated monitor photodiodes
Authors: Deichsel, E Eberhard, F Jager, R Unger, P
Citation: E. Deichsel et al., High-power laser diodes with dry-etched mirror facets and integrated monitor photodiodes, IEEE S T QU, 7(2), 2001, pp. 106-110
Characterization of etched facets for GaN-based lasers
Authors: Scherer, M Schwegler, V Seyboth, M Eberhard, F Kirchner, C Kamp, M Ulu, G Unlu, MS Gruhler, R Hollricher, O
Citation: M. Scherer et al., Characterization of etched facets for GaN-based lasers, J CRYST GR, 230(3-4), 2001, pp. 554-557
MOVPE homoepitaxy of high-quality GaN: Crystal growth and devices
Authors: Kirchner, C Schwegler, V Eberhard, F Kamp, M Ebeling, KJ Prystawko, P Leszczynski, M Grzegory, I Porowski, S
Citation: C. Kirchner et al., MOVPE homoepitaxy of high-quality GaN: Crystal growth and devices, PROG CRYST, 41(1-4), 2000, pp. 57-83
Highly efficient oxide-confined VCSEL arrays for parallel optical interconnects
Authors: Jung, C King, R Jager, R Grabherr, M Eberhard, F Michalzik, R Ebeling, KJ
Citation: C. Jung et al., Highly efficient oxide-confined VCSEL arrays for parallel optical interconnects, J OPT A-P A, 1(2), 1999, pp. 272-275
Influence of pre-etching on specific contact parameters for metal-GaN contacts
Authors: Mistele, D Adertold, J Klausing, H Rotter, T Semchinova, O Stemmer, J Uffmann, D Graul, J Eberhard, F Mayer, M Schauler, M Kamp, M Ahrens, C
Citation: D. Mistele et al., Influence of pre-etching on specific contact parameters for metal-GaN contacts, SEMIC SCI T, 14(7), 1999, pp. 637-641
Comparison of the etching behavior of GaAs and GaN in a chemically-assisted ion-beam etching system
Authors: Eberhard, F Schauler, M Deichsel, E Kirchner, C Unger, P
Citation: F. Eberhard et al., Comparison of the etching behavior of GaAs and GaN in a chemically-assisted ion-beam etching system, MICROEL ENG, 46(1-4), 1999, pp. 323-326
Increased-area oxidised single-fundamental mode VCSEL with self-aligned shallow etched surface relief
Authors: Unold, HJ Grabherr, M Eberhard, F Mederer, F Jager, R Riedl, M Ebeling, KJ
Citation: Hj. Unold et al., Increased-area oxidised single-fundamental mode VCSEL with self-aligned shallow etched surface relief, ELECTR LETT, 35(16), 1999, pp. 1340-1341
Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology
Authors: Kirchner, C Schwegler, V Eberhard, F Kamp, M Ebeling, KJ Kornitzer, K Ebner, T Thonke, K Sauer, R Prystawko, P Leszczynski, M Grzegory, I Porowski, S
Citation: C. Kirchner et al., Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology, APPL PHYS L, 75(8), 1999, pp. 1098-1100
Dry etching of GaN substrates for high-quality homoepitaxy
Authors: Schauler, M Eberhard, F Kirchner, C Schwegler, V Pelzmann, A Kamp, M Ebeling, KJ Bertram, F Riemann, T Christen, J Prystawko, P Leszczynski, M Grzegory, I Porowski, S
Citation: M. Schauler et al., Dry etching of GaN substrates for high-quality homoepitaxy, APPL PHYS L, 74(8), 1999, pp. 1123-1125
Risultati: 1-9 |