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Results:
1-9
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Results: 9
Authors:
Ebong, A
Hilali, M
Rohatgi, A
Meier, D
Ruby, DS
Citation: A. Ebong et al., Belt furnace gettering and passivation of n-web silicon for high-efficiency screen-printed front-surface-field solar cells, PROG PHOTOV, 9(5), 2001, pp. 327-332
Authors:
Ebong, A
Brody, J
Rohatgi, A
Williams, T
Citation: A. Ebong et al., Optimization of front metal contact firing scheme to achieve high fill factors on screen printed silicon solar cells, SOL EN MAT, 65(1-4), 2001, pp. 613-619
Authors:
Meier, DL
Davis, HP
Garcia, RA
Salami, J
Rohatgi, A
Ebong, A
Doshi, P
Citation: Dl. Meier et al., Aluminum alloy back p-n junction dendritic web silicon solar cell, SOL EN MAT, 65(1-4), 2001, pp. 621-627
Authors:
Yelundur, V
Rohatgi, A
Ebong, A
Gabor, AM
Hanoka, J
Wallace, RL
Citation: V. Yelundur et al., Al-enhanced PECVD SiNx induced hydrogen passivation in string ribbon silicon, J ELEC MAT, 30(5), 2001, pp. 526-531
Authors:
Hilali, M
Ebong, A
Rohatgi, A
Meier, DL
Citation: M. Hilali et al., Resistivity dependence of minority carrier lifetime and cell performance in p-type dendritic web silicon ribbon, SOL ST ELEC, 45(12), 2001, pp. 1973-1978
Authors:
Rohatgi, A
Ebong, A
Yelundur, V
Ristow, A
Citation: A. Rohatgi et al., Rapid thermal processing of next generation silicon solar cells, PROG PHOTOV, 8(5), 2000, pp. 515-527
Authors:
Venkataraman, S
Singh, R
Parihar, V
Poole, KF
Rohatgi, A
Yeludur, V
Ebong, A
Citation: S. Venkataraman et al., A study of the effect of ultraviolet (UV) and vacuum ultraviolet (VUV) photons on the minority carrier lifetime of single crystal silicon processed by rapid thermal and rapid photothermal processing, J ELEC MAT, 28(12), 1999, pp. 1394-1398
Authors:
Rohatgi, A
Doshi, P
Ebong, A
Narasimha, S
Krygowski, T
Moschner, J
Citation: A. Rohatgi et al., Rapid processing of low-cost, high-efficiency silicon solar cells, B MATER SCI, 22(3), 1999, pp. 383-390
Authors:
Ebong, A
Doshi, P
Narasimha, S
Rohatgi, A
Wang, J
El-Sayed, MA
Citation: A. Ebong et al., The effect of low and high temperature anneals on the hydrogen content andpassivation of Si surface coated with SiO2 and SiN films, J ELCHEM SO, 146(5), 1999, pp. 1921-1924
Risultati:
1-9
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