AAAAAA

   
Results: 1-3 |
Results: 3
Simulation of dopant redistribution during gate oxidation including transient-enhanced diffusion caused by implantation damage
Authors: Uchida, T Eikyu, K Tsukuda, E Fujinaga, M Teramoto, A Yamashita, T Kunikiyo, T Ishikawa, K Kotani, N Kawazu, S Hamaguchi, C Nishimura, T
Citation: T. Uchida et al., Simulation of dopant redistribution during gate oxidation including transient-enhanced diffusion caused by implantation damage, JPN J A P 1, 39(5A), 2000, pp. 2565-2576
3-D topography and impurity integrated process simulator (3-D MIPS) and its applications
Authors: Fujinaga, M Kunikiyo, T Uchida, T Tsukuda, E Sonoda, K Eikyu, K Ishikawa, K Nishimura, T Kawazu, S
Citation: M. Fujinaga et al., 3-D topography and impurity integrated process simulator (3-D MIPS) and its applications, IEICE TR EL, E82C(6), 1999, pp. 848-861
2-dimensional simulation of FN current suppression including phonon assisted tunneling model in silicon dioxide
Authors: Eikyu, K Sakakibara, K Ishikawa, K Nishimura, T
Citation: K. Eikyu et al., 2-dimensional simulation of FN current suppression including phonon assisted tunneling model in silicon dioxide, IEICE TR EL, E82C(6), 1999, pp. 889-893
Risultati: 1-3 |