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Results:
1-20
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Results: 20
Authors:
Ariel, N
Eizenberg, M
Wang, Y
Murarka, SP
Citation: N. Ariel et al., Deposition temperature effect on thermal stability of fluorinated amorphous carbon films utilized as low-K dielectrics, MAT SC S PR, 4(4), 2001, pp. 383-391
Authors:
Tamir, S
Eizenberg, M
Somjen, D
Izrael, S
Vaya, J
Citation: S. Tamir et al., Estrogen-like activity of glabrene and other constituents isolated from licorice root, J STEROID B, 78(3), 2001, pp. 291-298
Authors:
Kohn, A
Eizenberg, M
Shacham-Diamand, Y
Sverdlov, Y
Citation: A. Kohn et al., Characterization of electroless deposited Co(W,P) thin films for encapsulation of copper metallization, MAT SCI E A, 302(1), 2001, pp. 18-25
Authors:
Ariel, N
Eizenberg, M
Wang, Y
Bakhru, H
Citation: N. Ariel et al., The interface of fluorinated amorphous carbon with copper metallization, MAT SCI E A, 302(1), 2001, pp. 26-30
Authors:
Kohn, A
Eizenberg, M
Shacham-Diamand, Y
Israel, B
Sverdlov, Y
Citation: A. Kohn et al., Evaluation of electroless deposited Co(W,P) thin films as diffusion barriers for copper metallization, MICROEL ENG, 55(1-4), 2001, pp. 297-303
Authors:
Kroger, R
Eizenberg, M
Cong, D
Yoshida, N
Chen, LY
Ramaswami, S
Carl, D
Citation: R. Kroger et al., Influence of diffusion barriers on the nucleation and growth of CVD Cu forinterconnect applications, MICROEL ENG, 50(1-4), 2000, pp. 375-381
Authors:
Kroger, R
Eizenberg, M
Rabkin, E
Cong, D
Chen, L
Citation: R. Kroger et al., The role of kinetics in the nucleation and void formation in copper films produced by chemical vapor deposition, J APPL PHYS, 88(4), 2000, pp. 1867-1872
Authors:
Zeitouny, A
Eizenberg, M
Pearton, SJ
Ren, F
Citation: A. Zeitouny et al., Contact resistivity and transport mechanisms in W contacts to p- and n-GaN, J APPL PHYS, 88(4), 2000, pp. 2048-2053
Authors:
Aubry-Fortuna, V
Tremblay, G
Meyer, F
Miron, Y
Roichman, Y
Eizenberg, M
Fortuna, F
Hormann, U
Strunk, H
Citation: V. Aubry-fortuna et al., Phase formation and strain relaxation during thermal reaction of Zr and Tiwith strained Si1-x-yGexCy epilayers, J APPL PHYS, 88(3), 2000, pp. 1418-1423
Authors:
Shalish, I
de Oliveira, CEM
Shapira, Y
Burstein, L
Eizenberg, M
Citation: I. Shalish et al., Thermal stability of Pt Schottky contacts to 4H-SiC, J APPL PHYS, 88(10), 2000, pp. 5724-5728
Authors:
Roichman, Y
Berner, A
Brener, R
Cytermann, C
Shilo, D
Zolotoyabko, E
Eizenberg, M
Osten, HJ
Citation: Y. Roichman et al., Co silicide formation on epitaxial Si1-yCy/Si (001) layers, J APPL PHYS, 87(7), 2000, pp. 3306-3312
Authors:
Tamir, S
Eizenberg, M
Somjen, D
Stern, N
Shelach, R
Kaye, A
Vaya, J
Citation: S. Tamir et al., Estrogenic and antiproliferative properties of glabridin from licorice in human breast cancer cells, CANCER RES, 60(20), 2000, pp. 5704-5709
Authors:
Shalish, I
Kronik, L
Segal, G
Shapira, Y
Eizenberg, M
Salzman, J
Citation: I. Shalish et al., Yellow luminescence and Fermi level pinning in GaN layers, APPL PHYS L, 77(7), 2000, pp. 987-989
Authors:
Zeitouny, A
Eizenberg, M
Pearton, SJ
Ren, F
Citation: A. Zeitouny et al., W and W/WSi/In1-xAlxN ohmic contacts to n-type GaN, MAT SCI E B, 59(1-3), 1999, pp. 358-361
Authors:
Cao, XA
Pearton, SJ
Donovan, SM
Abernathy, CR
Ren, F
Zolper, JC
Cole, MW
Zeitouny, A
Eizenberg, M
Shul, RJ
Baca, AG
Citation: Xa. Cao et al., Thermal stability of WSix and W ohmic contacts on GaN, MAT SCI E B, 59(1-3), 1999, pp. 362-365
Authors:
Cao, XA
Ren, F
Pearton, SJ
Zeitouny, A
Eizenberg, M
Zolper, JC
Abernathy, CR
Han, J
Shul, RJ
Lothian, JR
Citation: Xa. Cao et al., W and WSix Ohmic contacts on p- and n-type GaN, J VAC SCI A, 17(4), 1999, pp. 1221-1225
Authors:
Beregovsky, M
Levin, I
Berner, A
Eizenberg, M
Demuth, V
Strunk, HP
Citation: M. Beregovsky et al., Effect of impurities on initial stages of phase formation for the system of Ti deposited on (001) Si-Ge layers, THIN SOL FI, 338(1-2), 1999, pp. 110-117
Authors:
Avinun, M
Kaplan, WD
Eizenberg, M
Guo, T
Mosely, R
Citation: M. Avinun et al., Factors which determine the orientation of CVD Al films grown on TiN, SOL ST ELEC, 43(6), 1999, pp. 1011-1014
Authors:
Kroger, R
Eizenberg, M
Cong, D
Yoshida, N
Chen, LY
Ramaswami, S
Carl, D
Citation: R. Kroger et al., Properties of copper films prepared by chemical vapor deposition for advanced metallization of microelectronic devices, J ELCHEM SO, 146(9), 1999, pp. 3248-3254
Authors:
Aubry-Fortuna, V
Eyal, A
Chaix-Pluchery, O
Barthula, M
Meyer, F
Eizenberg, M
Citation: V. Aubry-fortuna et al., Thermal stability and electrical properties of Zr/Si1-x-yGexCy contacts after rapid thermal annealing, APPL PHYS L, 73(9), 1998, pp. 1248-1250
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